GaAs SP2T Absorptive Switch with

ASIC Driver, DC-3.0 GHz

Rev. V3

MASW-007072-000100

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Parameter

Absolute Maximum

Max. Input Power

0.05 GHz

+27 dBm

+34 dBm

Operating Temperature

-40ºC to +85ºC

Storage Temperature

-65ºC to +125ºC

3. Exceeding any one or combination of these limits may cause

permanent damage to this device.

4. M/A-COM does not recommend sustained operation near

these survivability limits.

5. When the RF input is applied to the terminated port, the abso-

lute maximum power is +30 dBm.

6. Standard CMOS TTL interface, latch-up will occur if logic sig-

nal is applied prior to power supply.

Recommended PCB Configuration

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Truth Table (Switch)

C1

RF1

RF2

0

On

Off

1

Off

On

0 = TTL Low; 1 = TTL High