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BAS316 Datasheet(PDF) 2 Page - Microdiode Electronics (Jiangsu) Co.,Ltd. |
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BAS316 Datasheet(HTML) 2 Page - Microdiode Electronics (Jiangsu) Co.,Ltd. |
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2 / 4 page  Silicon Epitaxial Planar Diode BAS316 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 100 - V IR=100μA Forward Voltage VF 0.715 0.855 1.0 1.25 V IF=1.0mA IF=10mA IF=50mA IF=150mA Reverse Current IR - 1.0 0.03 μA VR=75V VR=25V Capacitance between terminals CT - 1.5 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 4.0 ns IF=IR=10mA,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ |
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