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UCC27322DGNR Datasheet(PDF) 4 Page - Texas Instruments |
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UCC27322DGNR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 35 page UCC27321, UCC27322 UCC37321, UCC37322 SLUS504H – SEPTEMBER 2002 – REVISED JANUARY 2016 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Supply voltage, VDD –0.3 16 V Output current (OUT) DC, IOUT_DC 0.6 A Input voltage (IN), VIN –0.3 6 V or VDD + 0.3 (3) V Enable voltage (ENBL) –0.3 6 V or VDD + 0.3 (3) V D package 650 mW Power dissipation at TA = 25°C DGN package 3 W P package 350 mW Lead temperature (soldering, 10 s) 300 °C Junction operating temperature, TJ –55 150 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating ConditionsRecommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal. (3) Whichever is larger 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22- ±1500 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage, VDD 4.5 15 V 7.4 Thermal Information UCC27322 UCC27321 DGN (MSOP- THERMAL METRIC(1) D (SOIC) P (PDIP) UNIT PowerPAD) 8 PINS 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 56.6 55.9 56.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 52.8 45.3 52.9 °C/W RθJB Junction-to-board thermal resistance 32.6 32.6 32.7 °C/W ψJT Junction-to-top characterization parameter 1.8 23.0 1.8 °C/W ψJB Junction-to-board characterization parameter 32.3 32.5 32.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 5.9 — 5.9 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated |
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