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G001

0

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0

0.5

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1.5

2

2.5

G001

Product

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CSD13201W10

SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015

CSD13201W10 N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

TYPICAL VALUE

UNIT

•

Small Footprint (1 mm × 1 mm)

Drain-to-Source Voltage

12

V

•

Low Profile 0.62-mm Height

Gate Charge Total (4.5 V)

2.3

nC

Gate Charge Gate-to-Drain

0.3

nC

•

Pb-Free

38

•

RoHS Compliant

m

Ω

Drain-to-Source On

29

Resistance

•

Halogen-Free

26

m

Ω

•

Gate-Source Voltage Clamp

Threshold Voltage

0.8

V

2 Applications

Device Information(1)

•

Battery Management

PART NUMBER

PACKAGE

MEDIA

QTY

SHIP

•

Load Switch

1 mm × 1 mm

7-inch

Tape and

CSD13201W10

3000

Wafer Level Package

reel

Reel

•

Battery Protection

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

This 12-V, 26-m

Ω, N-Channel device is designed to

Absolute Maximum Ratings

deliver the lowest on resistance and gate charge in

VALUE

UNIT

the smallest outline possible with excellent thermal

Drain-to-Source Voltage

12

V

characteristics in an ultra-low profile.

Gate-to-Source Voltage

±8

V

Continuous Drain Current,

Top View

1.6

A

(1)

(2)

20.2

A

Power Dissipation(1)

1.2

W

Operating Junction and

–55 to 150

°C

Storage Temperature Range

(2) Pulse width

≤ 300 μs, duty cycle ≤ 2%

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.