SPDT PIN Diode Driver

Rev. V3

MADR-007097

2

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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2

Parameter

Test Conditions

Units

Min

Typ

Max

Delay

Rt/Ft

Spike current into 10 ohm load

50 % TTL to 90%

10%-90%; 90%-10%

ns

ns

—

—

25

2

35

5

PRF

50% duty cycle

MHz

DC

—

5

Output Voltage Drop, No Load

With reference to supply voltage

V

—

—

0.25

DC Output Current

Peak Spike Output Current

Load Dependant

Spiking Capacitor in Circuit

mA

mA

—

—

±30

±150

±50

±200

Output Stage on Resistance

Positive Output FET, Qp

Negative Output FET, Qn





—

—

15

10

20

15

Quiescent Supply Currents

+5V

-5V

mA

mA

—

—

—

—

1.5

.2

TTL Levels

Logic “0” @ 20 µA sink current

Logic “1” @ 20 µA source current

V

V

0

2.0

—

—

.8

5.0

Package Dissipation

—

mW

—

—

200

Parameter

Absolute Maximum

VCC

-0.5V ≤ VCC ≤ +7.0V

VDD

-0.5V ≤ VDD ≤ VCC

VEE

-7.0V ≤ VEE ≤ +0.5V

C1 (TTL Input Voltage)

-0.5V to Vcc +0.5V

Operating Temperature

-40ºC to +85ºC

Storage Temperature

-65ºC to +125ºC

2. Exceeding any one or combination of these limits may cause

permanent damage to this device.

3. M/A-COM does not recommend sustained operation near

these survivability limits.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Silicon

Integrated

Circuits

are

sensitive

to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these devices.

1. Decoupling capacitors (.01 µF) are required on power supply lines.