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DSS45160FDB Datasheet(PDF) 2 Page - Diodes Incorporated |
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DSS45160FDB Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 9 page DSS45160FDB Datasheet Number: DS37802 Rev.1 - 2 2 of 9 www.diodes.com December 2015 © Diodes Incorporated DSS45160FDB Absolute Maximum Ratings – Q1 and Q2 (@T A = +25°C, unless otherwise specified.) Characteristic Symbol NPN PNP Unit Collector-Base Voltage VCBO 60 -60 V Collector-Emitter Voltage VCEO 60 -60 V Emitter-Base Voltage VEBO 7 -7 V Continuous Collector Current IC 1 -1 A Peak Pulse Collector Current ICM 1.5 -1.5 A Base Current IB 300 -300 mA Peak Base Current IBM 1 -1 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Notes 5 & 7) PD 405 mW (Notes 5 & 8) 510 (Notes 6 & 7) 1650 (Notes 6 & 8) 2470 Thermal Resistance, Junction to Ambient (Notes 5 & 7) RJA 308 °C/W (Notes 5 & 8) 245 (Notes 6 & 7) 76 (Notes 6 & 8) 51 Thermal Resistance, Junction to Lead (Note 9) RJL 18 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge – Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge – Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm 2) 2oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 0.1 1 10 1m 10m 100m 1 100m 1 10 1m 10m 100m 1 PNP Safe Operating Area Single Pulse T amb =25°C See note 5 &7 V CE(sat) Limit 100µs 1ms 10ms 100ms 1s DC NPN Safe Operating Area V CE Collector-Emitter Voltage (V) Single Pulse T amb =25°C See note 5 & 7 100µs 1ms 10ms 100ms 1s DC V CE(sat) Limit -V CE Collector-Emitter Voltage (V) |
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