Cascadable Amplifier

1000 to 4000 MHz

Rev. V3

A45 / SMA45

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

1000-4000

1000-4000

1000-4000

Small Signal Gain (min)

dB

17.5

16.5

15.5

Gain Flatness (max)

dB

±0.6

±0.8

±1.0

Reverse Isolation

dB

36

Noise Figure (max)

dB

4.0

5.0

5.5

Power Output

@ 1 dB comp. (min)

dBm

19.5

18.0

17.0

IP3

dBm

+29

IP2

dBm

+39

Second Order Harmonic IP

dBm

+44

VSWR Input / Output (max)

1.8:1 / 1.7:1

2.1:1 / 2.1:1

2.2:1 / 2.2:1

DC Current @ 15 Volts (max)

mA

120

125

130

Features

 HIGH GAIN 17.5 dB (TYP.)

 LOW NOISE: 4.5 dB (TYP.)

 HIGH OUTPUT POWER: +19.5 dBm (TYP.)

 GaAs FET DESIGN

Description

The A45 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for accurate performance

and high reliability.

This single stage GaAs FET feedback amplifier design displays

impressive performance characteristics over a broadband

frequency range. An RF choke is used for DC power supply

decoupling.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A45

TO-8

SMA45

Surface Mount

CA45 **

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

85ºC

DC Voltage

+16 V

Continuous Input Power

+13 dBm

Short Term Input power

(1 minute max.)

100 mW

Peak Power (3 µsec max.)

0.25 W

“S” Series Burn-In

Temperature (case)

85ºC

Parameter

Rating

131ºC/W

0.497 W

Junction Temperature Rise

65ºC

** The connectorized version is not RoHs compliant.