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8

HMC326MS8G

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

v04.1203

General Description

Features

Functional Diagram

The HMC326MS8G is a high efficiency GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC driver

amplifier which operates between 3.0 and 4.5 GHz.

The amplifier is packaged in a low cost, surface mount

8 leaded package with an exposed base for improved

RF and thermal performance. The amplifier provides

21 dB of gain and +26 dBm of saturated power from

a +5.0V supply voltage. Power down capability is

available to conserve current consumption when the

amplifier is not in use. Internal circuit matching was

optimized to provide greater than 40% PAE.

Psat Output Power: +26 dBm

> 40% PAE

Output IP3: +36 dBm

High Gain: 21 dB

Vs: +5.0V

Ultra Small Package: MSOP8G

Typical Applications

The HMC326MS8G is ideal for:

• Microwave Radios

• Broadband Radio Systems

• Wireless Local Loop Driver Amplifier

Parameter

Min.

Typ.

Max.

Units

Frequency Range

3.0 - 4.5

GHz

Gain

18

21

dB

Gain Variation Over Temperature

0.025

0.035

dB / °C

Input Return Loss

12

dB

Output Return Loss

7dB

Output Power for 1dB Compression (P1dB)

21

23.5

dBm

Saturated Output Power (Psat)

26

dBm

Output Third Order Intercept (IP3)

32

36

dBm

Noise Figure

5dB

Supply Current (Icc)

Vpd = 0V / 5V

0.001 / 130

mA

Control Current (Ipd)

7mA

Switching Speed

tOn/tOff

10

ns