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MAUC-010515-000000 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MAUC-010515-000000 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 8 page Up Converter 40.5 - 43.5 GHz Rev. V5 MAUC-010515 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2 Electrical Specifications: RF Freq: 40.5 - 43.5 GHz, LO = 0 dBm, IF = -10 dBm, VD = 4 V, ID1 = ID2 = 90 mA, ID3 = 120 mA, TA = 25°C Parameter Units Min. Typ. Max. Frequency Range (LO)2 GHz 18.5 - 21.75 Frequency Range (IF) GHz DC - 3.5 LO Input Power (Plo) dBm 0 - 8 Conversion Gain dB 8 11 16 Image Rejection dBc - 22 - Output IP3 dBm 25 30 - Spurious (2xLO) [tuned] dBm - -40 - Spurious (1xLO) dBm - -57 - Noise Figure dB - 19 - Input Return Loss (IF port) dB - 12 - Output Return Loss (RF Port) dB - 8 - LO Return Loss dB - 15 - Current 3 (ID1 + ID2 + ID3) mA - 300 400 Gate Voltage (VG4) V - -3 - Gate Current (IG4) mA - 4 - 2. LO frequency range limits the performance characteristics to USB only. 3. Adjust VG1, VG2, VG3 between -1.0 and -0.1 V to achieve specified current. Typical 300 mA = 90 (ID1) + 90 (ID2) + 120 (ID3) Absolute Maximum Ratings 4,5,6 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Human Body Model Class 1B and Machine Model Class B devices. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with TJ ≤ 150 °C will ensure MTTF > 1 x 106 hours. 7. Junction Temperature (TJ) = TC + ӨJC * (V * I) Typical thermal resistance (ӨJC) = 41.7 °C/W. a) For TC = 25 °C, TJ = 75.04 °C @ 4 V, 300 mA b) For TC = 85 °C, TJ = 135.04 °C @ 4 V, 300 mA Parameter Absolute Maximum Drain Voltage 4.3 V Gate Bias Voltage (VG1,2,3) -1.5 V < VG < 0 V Gate Bias Voltage (VG4) -4.0 V < VG < 0 V Input Power 10 dBm LO Input Power 13 dBm Storage Temperature -55°C to +150°C Operating Temperature -40°C to +85°C Junction Temperature7 +150°C |
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