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TLP560G Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP560G Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP560G 2014-09-22 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 10 ― pF Peak off −state current IDRM VDRM = 400 V ― 10 100 nA Peak on −state voltage VTM ITM = 100 mA ― 1.7 3.0 V Holding current IH ― ― 0.6 ― mA Critical rate of rise of off −state voltage dv / dt Vin = 120 Vrms, Ta = 85 °C (Fig.1) 200 500 ― V / μs Critical rate of rise of commutating voltage dv / dt(c) Vin = 30 Vrms, IT = 15 mA (Fig.1) ― 0.2 ― V / μs Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT VT = 3V ― 5 10 mA Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF Isolation resistance RS VS = 500 V, R.H.≦60% 5×10 10 10 14 ― Ω Isolation voltage BVS AC, 1 minute 2500 ― ― Vrms AC, 1 second, in oil ― 5000 ― DC, 1 minute, in oil ― 5000 ― Vdc Fig.1: dv / dt test circuit 1 2 3 6 4 Rin 2kΩ 120Ω VCC Vin – + dv / dt(c) dv / dt 5V, VCC 0V |
Similar Part No. - TLP560G_14 |
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Similar Description - TLP560G_14 |
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