MICROWAVE CORPORATION

14 - 74

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

14

HMC224MS8

Outline Drawing

v01.0300

GaAs MMIC T/R SWITCH

5.0 - 6.0 GHz

Typical Application Circuit

Notes:

1.

Control Inputs A and B can be driven directly with CMOS logic

(HC) with V of 3 to 8 Volts applied to the CMOS logic gates

and to pin 4 of the RF switch.

2.

Set V to 5 Volts and use HCT series logic to provide a TTL

driver interface.

3.

Highest RF signal power capability is achieved with V set to

+10V. However, the switch will operate properly (but at

lower RF power capability) at bias voltages down to +3V.

4.

RF ByPass: Do not use RF bypass capacitors on Vdd, A or B

ports. Resistors R1, R2, R3 = 100 Ohms should be placed

close to the Vdd, A and B ports. Use resistor size 0402 to

minimize parasitic inductances and capacitances.

5.

DC Blocking capacitors are not required for each RF port.

6.

Evaluation PCB available.

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.