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HYB25D1G160TEL-37 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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HYB25D1G160TEL-37 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 28 page DRAM Components Speed / Performance 3 = DDR2-667 4-4-4 (DDR2) 3.7 = DDR2-533 4-4-4 (DDR2) 5 = DDR2-400 3-3-3 / DDR400B 3-3-3 (DDR2 / DDR) 6 = DDR333 2.5-3-3 / PC166 3-3-3 (DDR / SDR) 7 = DDR266A 2-3-3 / PC133 2-2-2 (DDR / SDR) 7F = DDR266 2-2-2 (DDR) 7.5 = DDR266B 2.5-3-3 / PC133 3-3-3 (DDR / SDR) 8 = DDR200 2-2-2 / PC100 2-2-2 (DDR / SDR) Power none = Standard Power L = Low-Power Product Package C = FBGA Contains Lead T = TSOP 400 mil Contains Lead E = TSOP 400 mil Lead and Halogen-Free (ROHS*-compliant) F = FBGA Lead and Halogen-Free (ROHS*-compliant) G = TSOP stack Lead and Halogen-Free (ROHS*-compliant) Product Revision Die Revision Product Variation 0 = Standard Product Organization 40 = x 4 80 = x 8 16 = x 16 Memory Density 128 = 128 Mb 256 = 256 Mb 512 = 512 Mb 1G = 1024 Mb Memory Type S = SDR Single Data Rate SDRAM D = DDR Double Data Rate SDRAM T = DDR2 Double Data Rate 2 SDRAM Supply Voltage 39 = 3.3 V 25 = 2.5 V 18 = 1.8 V Prefix HYB = Memory Components * ROHS = Restriction Of Hazardous Substances HYB 25 D 128 80 0 C T - 6 (Example) 4 4 Nomenclature DRAM Components |
Similar Part No. - HYB25D1G160TEL-37 |
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