POWERDI is a registered trademark of Diodes Incorporated.

DMTH4007SPSQ

Document number: DS38160 Rev. 1 - 2

2 of 8

www.diodes.com

November 2015

© Diodes Incorporated

DMTH4007SPSQ

H4007SS

S

S

S

G

D

D

D

D

YY WW

Marking Information

Characteristic

Symbol

Value

Units

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 6)

15.7

13.1

A

Continuous Drain Current (Note 7)

(Note 10)

100

A

77

Maximum Continuous Body Diode Forward Current (Note 7)

100

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

120

A

Avalanche Current, L=0.3mH

20

A

Avalanche Energy, L=0.3mH

60

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

2.8

W

Thermal Resistance, Junction to Ambient (Note 6)

53

°C/W

Total Power Dissipation (Note 7)

136

W

Thermal Resistance, Junction to Case (Note 7)

1.1

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

= Manufacturer’s Marking

H4007SS = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Digit of Year (ex: 14 = 2014)

WW = Week Code (01 to 53)