GaN Wideband Transistor 28 V, 4 W

DC - 6 GHz

Rev. V1

MAGX-011086

3

33

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Parameter

Absolute Max.

100 V

-10 V to 3 V

4 mA

+200°C

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

3. Exceeding any one or combination of these limits may cause permanent damage to this device.

4. MACOM does not recommend sustained operation near these survivability limits.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Nitride Integrated Circuits are sensitive to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these class 1A

devices.

Parameter

Test Conditions

Symbol

Typ.

Units

Thermal Resistance

12.5

°C/W

embedded in heat-sink.

7. The thermal resistance of the mounting configuration must be added to the device

tion during operation. The recommended via pattern, shown on page 6, on a 20 mil thick, 1oz plated copper,

PCB contributes an additional 6.6 °C/W to the typical value.