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MAGX-011086-SMBPPR Datasheet(PDF) 3 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-011086-SMBPPR Datasheet(HTML) 3 Page - M/A-COM Technology Solutions, Inc. |
3 / 10 page GaN Wideband Transistor 28 V, 4 W DC - 6 GHz Rev. V1 MAGX-011086 3 33 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Parameter Absolute Max. Drain-Source Voltage, VDS 100 V Gate-Source Voltage, VGS -10 V to 3 V Gate Current, IG 4 mA Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Absolute Maximum Ratings3,4, 5 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 10 6 hours. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 1A devices. Thermal Characteristics6, 7 Parameter Test Conditions Symbol Typ. Units Thermal Resistance VDS = 28 V, TJ = 200°C ӨJC 12.5 °C/W 6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. 7. The thermal resistance of the mounting configuration must be added to the device ӨJC, for proper TJ calcula- tion during operation. The recommended via pattern, shown on page 6, on a 20 mil thick, 1oz plated copper, PCB contributes an additional 6.6 °C/W to the typical value. |
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