Ka-Band 4 W Power Amplifier

32 - 38 GHz

Rev. V1

MAAP-015016-DIE

1

1

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1

Features

 Frequency Range: 32 to 38 GHz

 Small Signal Gain: 18 dB

 Saturated Power: 37 dBm

 Power Added Efficiency: 23%

 100% On-Wafer RF and DC Testing

 100% Visual Inspection to MIL-STD-883 Method

2010

 Dimensions: 3.09 x 5.67 x 0.05 mm

Description

The MAAP-015016-DIE is a wideband power

amplifier operating from 32 to 38 GHz, with a

saturated output power of 37 dBm, 23% PAE and

small signal gain of 18 dB.

The design is fully matched to 50 Ohms and

includes on-chip ESD protection and integrated DC

blocking caps on both I/O ports. The device is

manufactured in 0.15 µm GaAs pHEMT device

technology with BCB wafer coating to enhance

ruggedness and repeatability of performance.

The

part

is

well

suited

for

Radar

and

Communications applications.

Part Number

Package

MAAP-015016-DIE

MAAP-015016-DIEEV1

Evaluation Module

1. Die quantity varies.

Functional Diagram

Pad

Function

Description

1

Input, matched to 50 Ω

2,14

Gate Voltage Stage 1 - 3

3,13

Drain Voltage Stage 1

4,12

Drain Voltage Stage 2

5,11

Drain Voltage Stage 3

6,10

Gate Voltage Stage 4

7,9

Drain Voltage Stage 4

8

Output, matched to 50 Ω

2. Backside metal is RF, DC and thermal ground.