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DMNH10H028SPSQ Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMNH10H028SPSQ Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMNH10H028SPSQ Maximum Ratings (@TC = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = 10V Steady State TC = +25°C TC = +100°C ID 40 25 A Pulsed Drain Current (10 μs Pulse, Duty Cycle = 1%) (Note 6) IDM 54 A Maximum Continuous Body Diode Forward Current (Note 7) IS 3.9 A Avalanche Current (Note 9) L=0.1mH IAS 26 A Avalanche Energy (Note 9) L=0.1mH EAS 35 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 1.6 W Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 97 °C/W Total Power Dissipation (Note 7) PD 2.9 W Thermal Resistance, Junction to Ambient (Note 7) Steady state RJA 52 °C/W Thermal Resistance, Junction to Case RJC 1.8 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TC = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 2.0 2.5 4.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 19 28 m VGS = 10V, ID = 20A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 1.0A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 2245 — pF VDS = 50V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 173 — Reverse Transfer Capacitance Crss — 68 — Gate Resistance RG — 1.9 — VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg — 36 — nC VDD = 50V, ID = 20A Total Gate Charge (VGS = 6.0V) Qg — 22 — Gate-Source Charge Qgs — 7.3 — Gate-Drain Charge Qgd — 9.2 — Turn-On Delay Time tD(ON) — 6.4 — ns VGS = 10V, VDS= 50V, RG = 3.0, ID = 20A Turn-On Rise Time tR — 5.8 — Turn-Off Delay Time tD(OFF) — 17.8 — Turn-Off Fall Time tF — 4.8 — Reverse Recovery Time tRR — 35 — ns IF = 20A, di/dt = 100A/µs Reverse Recovery Charge QRR — 47 — nC IF = 20A, di/dt = 100A/µs Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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