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DMNH10H028SPSQ Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMNH10H028SPSQ
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH10H028SPSQ Datasheet(HTML) 2 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMNH10H028SPSQ
Document number: DS38226 Rev. 1 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMNH10H028SPSQ
Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current, VGS = 10V
Steady
State
TC = +25°C
TC = +100°C
ID
40
25
A
Pulsed Drain Current (10
μs Pulse, Duty Cycle = 1%) (Note 6)
IDM
54
A
Maximum Continuous Body Diode Forward Current (Note 7)
IS
3.9
A
Avalanche Current (Note 9) L=0.1mH
IAS
26
A
Avalanche Energy (Note 9) L=0.1mH
EAS
35
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
1.6
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RJA
97
°C/W
Total Power Dissipation (Note 7)
PD
2.9
W
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
RJA
52
°C/W
Thermal Resistance, Junction to Case
RJC
1.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
100
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 100V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
2.0
2.5
4.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
19
28
m
VGS = 10V, ID = 20A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
2245
pF
VDS = 50V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
173
Reverse Transfer Capacitance
Crss
68
Gate Resistance
RG
1.9
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V)
Qg
36
nC
VDD = 50V, ID = 20A
Total Gate Charge (VGS = 6.0V)
Qg
22
Gate-Source Charge
Qgs
7.3
Gate-Drain Charge
Qgd
9.2
Turn-On Delay Time
tD(ON)
6.4
ns
VGS = 10V, VDS= 50V,
RG = 3.0, ID = 20A
Turn-On Rise Time
tR
5.8
Turn-Off Delay Time
tD(OFF)
17.8
Turn-Off Fall Time
tF
4.8
Reverse Recovery Time
tRR
35
ns
IF = 20A, di/dt = 100A/µs
Reverse Recovery Charge
QRR
47
nC
IF = 20A, di/dt = 100A/µs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.


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