DMP6023LFGQ datasheet(4/7 Pages) DIODES

Part #	DMP6023LFGQ

Description	P-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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POWERDI is a registered trademark of Diodes Incorporated.

DMP6023LFGQ

Document number: DS38647 Rev. 1 - 2

4 of 7

www.diodes.com

March 2016

DMP6023LFGQ

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

-50

-25

0

25

50

75

100

125

150

V

=

5V

I =

A

GS

D

-4.

-5

V

, SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

SD

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

T = 150 C

A



T = 125 C

A



T = 85 C

A



T = 25 C

A



T = -55 C

A



V

, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS

100

1000

10000

0

5

10

15

20

25

30

35

40

f = 1MHz

Coss

C

rss

Ciss

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

g

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15 20

25

30

35

40

45

50

55

V

= -30V

I = -5A

DS

D

T , AMBIENT TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

A

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

T

H

)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

-50

-25

0

25

50

75

100

125

150

-I =1mA

D

-I = 250µA

D

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

T

= 150°C

T = 25°C

J(max)

A

V

= -10V

Single Pulse

GS

DUT on 1 * MRP Board

R

Limited

DS(on)

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

0.01

0.1

1

10

100

0.1

1

10

100

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