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TQQ7101-EVB Datasheet(PDF) 2 Page - TriQuint Semiconductor

Part # TQQ7101-EVB
Description  Band 1 BAW Duplexer
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TQQ7101-EVB Datasheet(HTML) 2 Page - TriQuint Semiconductor

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TQQ7101
Band 1 BAW Duplexer
Datasheet: Rev E 12-03-15
- 2 of 12 -
Disclaimer: Subject to change without notice
© 2015 TriQuint Semiconductor, Inc
www.triquint.com / www.qorvo.com
Recommended Operating Conditions
Parameter
Min
Typ
Max Units
TCASE
−20
+85
°C
Electrical specifications are measured at specified test
conditions.
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−40 to +85°C
RF Input Power DL
(LTE, 5MHz, PAR=8 dB)
+29 dBm
RF Input Power UL (CW)
+23 dBm
Maximum DC Voltage on RF Input Pins
+5V
Operation of this device outside the parameter ranges given
may cause permanent damage
Electrical Specifications
– Downlink (1)
Operating Temperature Range:
−20 to +85 °C
Parameter
Conditions
Min
Typ
Max
Units
Passband
2110
-
2170
MHz
Insertion Loss(2)
2110 – 2170 MHz
-
2.8
3.8
dB
Amplitude Variation
2110 – 2170 MHz (+25 °C)
-
1.2
2.0
dB
Return Loss(2)
Antenna Port
7.1
10.2
-
dB
Return Loss(2)
Downlink Port
7.7
10.8
-
dB
Attenuation
0
.009  – 1920 MHz
1920 – 1980 MHz
1980 – 2025 MHz
2025 – 2070 MHz
2210 – 2300 MHz
2300  – 2370 MHz
237
0  – 2484 MHz
2484  – 2690 MHz
2690  – 3400 MHz
3400  – 4200 MHz
4200  – 4400 MHz
5150  – 5850 MHz
36
44
36
37
22
48
44
41
35
24
35
32
37
47
40
40
47
51
45
42
38
26
39
34
-
-
-
-
-
-
-
-
-
-
-
-
dB
Harmonic Distortion(3)
Pin = +29 dBm
50
55
-
dBc
Channel Power
LTE 5 MHz, PAR = 8dB, 8 years, 85 °C
+29
-
-
dBm
Notes:
1. All specifications are based on the TriQuint schematic for the main reference design.
2. Average value over the indicated band.
3. Additional 2nd harmonic improvement can be achieved using appropriate application. Refer to product technical notes for
details.


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