UCC27424DGN datasheet(5/34 Pages) TI1

Part #	UCC27424DGN

Description	Dual 4-A High Speed Low-Side MOSFET Drivers

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Manufacturer	TI1 [Texas Instruments]

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UCC27423, UCC27424, UCC27425

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SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015

7.5 Electrical Characteristics

VDD = 4.5 V to 15 V, TA = –40°C to 125°C,TA = TJ, (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT (INA, INB)

VIN_H Logic 1 input threshold

2

V

VIN_L Logic 0 input threshold

1

Input current

0 V

≤ VIN ≤ VDD

–10

0

10

μA

OUTPUT (OUTA, OUTB)

Output current

VDD = 14 V

(1)

4

A

VOH

High-level output voltage

VOH = VDD – VOUT, IOUT = –10 mA

330

450

mV

VOL

Low-level output level

IOUT = 10 mA

22

45

TA = 25°C, IOUT = –10 mA, VDD = 14 V

(2)

25

30

35

Output resistance high

TA = full range, IOUT = –10 mA, VDD = 14 V

(2)

18

45

Ω

TA = 25°C, IOUT = 10 mA, VDD = 14 V

(2)

1.9

2.2

2.5

Output resistance low

TA = full range IOUT = 10 mA, VDD = 14 V

(2)

1.2

4.0

Latch-up protection

500

mA

SWITCHING TIME

tr

Rise time (OUTA, OUTB)

CLOAD = 1.8 nF

20

40

tf

Fall time (OUTA, OUTB)

CLOAD = 1.8 nF

15

40

ns

td1

Delay, IN rising (IN to OUT)

CLOAD = 1.8 nF

25

40

td2

Delay, IN falling (IN to OUT)

CLOAD = 1.8 nF

35

50

ENABLE (ENBA, ENBB)

VIN_H High-level input voltage

LO to HI transition

1.7

2.4

2.9

V

VIN_L Low-level input voltage

HI to LO transition

1.1

1.8

2.2

V

Hysteresis

0.15

0.55

0.90

V

RENB Enable impedance

VDD = 14 V, ENB = GND

75

100

140

k

Ω

tD3

Propagation delay time (see Figure 2)

CLOAD = 1.8 nF

30

60

ns

tD4

Propagation delay time (see Figure 2)

CLOAD = 1.8 nF

100

150

ns

OVERALL

INA = 0 V, INB = 0 V

900

1350

UCC27423

INA = 0 V, INB = HIGH

750

1100

IDD

Static operating current, VDD = 15 V,

μA

INA = HIGH, INB = 0 V

750

1100

ENBA = ENBB = 15 V

INA = HIGH, INB = HIGH

600

900

INA = 0 V, INB = 0 V

300

450

UCC27424

INA = 0 V, INB = HIGH

750

1100

IDD

Static operating current, VDD = 15 V,

μA

INA = HIGH, INB = 0 V

750

1100

ENBA = ENBB = 15 V

INA = HIGH, INB = HIGH

1200

1800

INA = 0 V, INB = 0 V

600

900

UCC27425

INA = 0 V, INB = HIGH

1050

1600

IDD

Static operating current, VDD = 15 V,

μA

INA = HIGH, INB = 0 V

450

700

ENBA = ENBB = 15 V

INA = HIGH, INB = HIGH

900

1350

INA = 0 V, INB = 0 V

300

450

INA = 0 V, INB = HIGH

450

700

All disabled, VDD = 15 V,

IDD

μA

ENBA = ENBB = 0 V

INA = HIGH, INB = 0 V

450

700

INA = HIGH, INB = HIGH

600

900

(1)

The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the

combined current from the bipolar and MOSFET transistors.

(2)

The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the

MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.

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Product Folder Links: UCC27423 UCC27424 UCC27425

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