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TPS65735RSNT Datasheet(PDF) 6 Page - Texas Instruments

Part # TPS65735RSNT
Description  PMU for Active Shutter 3D Glasses
Download  39 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS65735RSNT Datasheet(HTML) 6 Page - Texas Instruments

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TPS65735
SLVSAI6A – JUNE 2011 – REVISED JANUARY 2016
www.ti.com
4.4
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
CHARGER / POWER PATH
VVIN
Voltage at charger input pin
3.7
28(1)
V
IVIN
Input current at VIN pin
200
mA
CVIN
Capacitor on VIN pin
0.1
2.2
10
µF
LVIN
Inductance at VIN pin
0
2
µH
VSYS
Voltage at SYS pin
2.5
6.4
V
ISYS(OUT)
Output current at SYS pin
100
mA
CSYS
Capacitor on SYS pin
0.1
4.7
10
µF
VBAT
Voltage at BAT pin
2.5
6.4
V
CBAT
Capacitor on BAT pin
4.7
10
µF
REXT(nCHG_STAT)
Resistor connected to nCHG_STAT pin to limit current into pin
320
Ω
BOOST CONVERTER / H-BRIDGE SWITCHES
VIN(BST_SW)
Input voltage for boost converter
2.5
6.5
V
VBST_OUT
Output voltage for boost converter
8
16
V
CBST_OUT
Boost output capacitor
3.3
4.7
10
µF
LBST_SW
(2)
Inductor connected between SYS and BST_SW pins
4.7
10(3)
µH
LDO
CVLDO
External decoupling cap on pin VLDO
1
10
µF
POWER MANAGEMENT CORE CONTROL (LOGIC LEVELS FOR GPIOs)
VIL(PMIC)
GPIO low level (BST_EN, CHG_EN, SW_SEL, VLDO_SET
0.4
V
and to switch H-Bridge inputs to a low, 0, level)
VIH(PMIC)
GPIO high level (BST_EN, CHG_EN, SW_SEL, VLDO_SET
1.2
V
and to switch H-Bridge inputs to a high, 1, level)
(1)
VIN pin has 28 V ESD protection
(2)
See Section 5.3.4 for information on boost converter inductor selection.
(3)
Design optimized for boost operation with 10 µH inductor
4.5
Thermal Information
TPS65735
THERMAL METRIC
RSN (WQFN)
UNIT
32 PINS
RθJA
Junction-to-ambient thermal resistance(1)
38.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance(2)
26.5
°C/W
RθJB
Junction-to-board thermal resistance(3)
9.8
°C/W
ψJT
Junction-to-top characterization parameter(4)
0.3
°C/W
ψJB
Junction-to-board characterization parameter(5)
9.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance(6)
3.5
°C/W
(1)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(2)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(3)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(4)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).
(5)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Spacer
6
Specifications
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