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TPS62170DSGR Datasheet(PDF) 5 Page - Texas Instruments

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Part # TPS62170DSGR
Description  Step-Down Converters
Download  34 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS62170DSGR Datasheet(HTML) 5 Page - Texas Instruments

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TPS62170, TPS62171, TPS62172, TPS62173
www.ti.com
SLVSAT8D – NOVEMBER 2011 – REVISED DECEMBER 2015
Product Folder Links: TPS62170 TPS62171 TPS62172 TPS62173
Submit Documentation Feedback
Copyright © 2011–2015, Texas Instruments Incorporated
(1)
The device is still functional down to under voltage lockout (see parameter VUVLO).
(2)
Current into VIN pin.
(3)
This is the static current limit. It can be temporarily higher in applications due to internal propagation delay (see Current Limit and Short
Circuit Protection).
(4)
This is the voltage regulated at the FB pin.
(5)
This is the accuracy provided by the device itself (line and load regulation effects are not included). For fixed voltage versions, the
(internal) resistive feedback divider is included.
7.5 Electrical Characteristics
Over free-air temperature range (TA = –40°C to 85°C), typical values at VIN = 12 V and TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VIN
Input voltage range(1)
3
17
V
IQ
Operating quiescent current
EN = High, IOUT = 0 mA, device not switching
17
25
µA
ISD
Shutdown current(2)
EN = Low
1.5
4
µA
VUVLO
Undervoltage lockout threshold
Falling input voltage
2.6
2.7
2.82
V
Hysteresis
180
mV
TSD
Thermal shutdown temperature
rising temperature
160
°C
Thermal shutdown hysteresis
falling temperature
20
CONTROL (EN, PG)
VEN_H
High level input threshold voltage (EN)
0.9
0.6
V
VEN_L
Low level input threshold voltage (EN)
0.56
0.3
V
ILKG_EN
Input leakage current (EN)
EN = VIN or GND
0.01
1
µA
VTH_PG
Power good threshold voltage
Rising (%VOUT)
92%
95%
98%
Falling (%VOUT)
87%
90%
93%
VOL_PG
Power good output low voltage
IPG = –2 mA
0.07
0.3
V
ILKG_PG
Input leakage current (PG)
VPG = 1.8 V
1
400
nA
POWER SWITCH
RDS(ON)
High-side MOSFET ON-resistance
VIN ≥ 6 V
300
600
m
Ω
VIN= 3 V
430
Low-side MOSFET ON-resistance
VIN≥ 6 V
120
200
m
Ω
VIN = 3 V
165
ILIMF
High-side MOSFET forward current limit(3)
VIN = 12 V, TA= 25°C
0.85
1.05
1.35
A
OUTPUT
VREF
Internal reference voltage(4)
0.8
V
ILKG_FB
Pin leakage current (FB)
TPS62170, VFB= 1.2 V
5
400
nA
VOUT
Output voltage range (TPS62170)
VIN ≥ VOUT
0.9
6.0
V
Initial output voltage accuracy(5)
PWM mode operation, VIN ≥ VOUT + 1 V
–3%
3%
Power save mode operation, COUT= 22 µF
-3.5%
4%
DC output voltage load regulation
VIN = 12 V, VOUT = 3.3 V, PWM mode operation
0.05
%/A
DC output voltage line regulation
3 V
≤ VIN ≤ 17 V, VOUT = 3.3 V, IOUT = 0.5 A,
PWM mode operation
0.02
%/V


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