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TPS65218 Datasheet(PDF) 11 Page - Texas Instruments |
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TPS65218 Datasheet(HTML) 11 Page - Texas Instruments |
11 / 87 page 11 TPS65218 www.ti.com SLDS206B – NOVEMBER 2014 – REVISED FEBRUARY 2016 Product Folder Links: TPS65218 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DCDC6 (1.8-V BATTERY BACKUP SUPPLY) VDCDC6 Output voltage 1.8 V DC accuracy 2.7 V ≤ VIN_BU ≤ 5.5 V; 1 µA ≤ IOUT ≤ 25 mA –1.5% 1.5% 2.2 V ≤ VCC ≤ 3.3 V; 1 µA ≤ IOUT ≤ 100 µA VIN_BIAS decay rate during CC transition > 150 V/s –1.5% 1.5% 2.2 V ≤ VCC ≤ 3.3 V; 1 µA ≤ IOUT ≤ 100 µA VIN_BIAS decay rate during CC transition < 150 V/s –10% 5% Output voltage ripple L = 10 µH; COUT = 22 µF; 100-µA load 30 mVpp IOUT Continuous output current 2.2 V < VCC < 3.3 V VIN_BU = 0 10 100 µA RDS(ON) High-side FET ON-resistance VIN_BU = 3.0 V 2.5 3.5 Ω Low-side FET ON-resistance VIN_BU = 3.0 V 2 3 ILIMIT High-side current limit VIN_BU = 3.0 V 50 mA VPG Power-good threshold VOUT falling 87% 91% 95% Hysteresis VOUT rising 3% IINRUSH Inrush current VCC = 3.0 V; VIN_BU = 0; COUT = 10 to 47 µF 500 µA L Nominal inductor value Chip inductor 4.7 10 22 µH Tolerance –30% 30% COUT Nominal output capacitor value Ceramic, X5R or X7R 20 47 µF Tolerance –20% 20% LDO1 (1.8-V LDO) VIN_LDO1 Input voltage range VIN_BIAS > VUVLO 1.8 5.5 V IQ Quiescent current No load 35 µA VOUT Output voltage range Adjustable through I2C 0.9 3.4 V DC Accuracy VOUT+0.2 V ≤ VIN ≤ 5.5 V; 0 A ≤ IOUT ≤ 200 mA –2% 2% IOUT Output current range 0 200 mA VIN_LDO1 > 2.7 V, VOUT = 1.8 V 0 400 ILIMIT Short circuit current limit Output shorted to GND 490 550 mA VDO Dropout voltage IOUT = 100 mA, VIN = 3.6 V 200 mV VPG Power-good threshold VOUT falling STRICT = 0 86% 90% 94% STRICT = 1 95% 95.5% 96% Hysteresis, VOUT rising STRICT = 0 3% 4% 5% STRICT = 1 0.25% Deglitch VOUT falling STRICT = 0 1 ms STRICT = 1 50 µs VOUT rising STRICT = 0 10 STRICT = 1 10 Time-out 5 ms VOV Over-voltage detection threshold(2) VOUT rising 104% 104.5% 105% Hysteresis VOUT falling 0.25% Deglitch VOUT rising 50 µs VOUT falling 1 ms RDIS Discharge resistor 150 250 350 Ω |
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