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TPS57060QDGQRQ1 Datasheet(PDF) 5 Page - Texas Instruments

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Part # TPS57060QDGQRQ1
Description  Step-Down DC-DC Converter With
Download  51 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS57060QDGQRQ1 Datasheet(HTML) 5 Page - Texas Instruments

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TPS57060-Q1
www.ti.com
SLVSAP2C – DECEMBER 2010 – REVISED FEBRUARY 2016
Product Folder Links: TPS57060-Q1
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Copyright © 2010–2016, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See the Power Dissipation Estimate section for more information.
6.4 Thermal Information
THERMAL METRIC(1)(2)
TPS57060-Q1
UNIT
DGQ (MSOP-PowerPAD)
DRC (VSON)
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
67.4
45.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
46.7
52.1
°C/W
RθJB
Junction-to-board thermal resistance
38.4
20.6
°C/W
ψJT
Junction-to-top characterization parameter
1.9
0.9
°C/W
ψJB
Junction-to-board characterization parameter
38.1
20.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
15.9
5.2
°C/W
6.5 Electrical Characteristics
TJ = –40°C to 150°C, VIN = 3.5 to 60 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage
3.5
60
V
Internal undervoltage lockout
threshold
No voltage hysteresis, rising and falling
2.5
V
Shutdown supply current
EN = 0 V, 25°C, 3.5 V
≤ VIN ≤ 60 V
1.3
4
μA
EN = 0 V, 125°C, 3.5 V
≤ VIN ≤ 60 V
1.9
6.5
Operating: nonswitching supply
current
VSENSE = 0.83 V, VIN = 12 V, 25°C
116
136
μA
ENABLE AND UVLO (EN PIN)
Enable threshold voltage
No voltage hysteresis, rising and falling, 25°C
1.15
1.25
1.36
V
Input current
Enable threshold +50 mV
–3.8
μA
Enable threshold –50 mV
–0.9
Hysteresis current
–2.9
μA
VOLTAGE REFERENCE
Voltage reference
0.792
0.8
0.808
V
HIGH-SIDE MOSFET
On-resistance
VIN = 3.5 V, BOOT-PH = 3 V
300
m
VIN = 12 V, BOOT-PH = 6 V
200
410
ERROR AMPLIFIER
Input current
50
nA
Error amplifier transconductance (gM) –2 μA < ICOMP < 2 μA, VCOMP = 1 V
97
μMhos
Error amplifier transconductance (gM)
during slow start
–2
μA < ICOMP < 2 μA, VCOMP = 1 V,
VVSENSE = 0.4 V
26
μMhos
Error amplifier dc gain
VVSENSE = 0.8 V
10,000
V/V
Error amplifier bandwidth
2700
kHz
Error amplifier source/sink
V(COMP) = 1 V, 100 mV overdrive
±7
μA
COMP to switch current
transconductance
1.9
A/V


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