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UCC24636DBVT Datasheet(PDF) 4 Page - Texas Instruments |
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UCC24636DBVT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 35 page 4 UCC24636 SLUSCG2A – MARCH 2016 – REVISED MARCH 2016 www.ti.com Product Folder Links: UCC24636 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VVDD Bias supply voltage, VDD –0.3 30 V IDRV Continuous gate current sink, DRV 50 mA IDRV Continuous gate current source, DRV –50 mA IVPC Peak VPC pin current –1.2 mA VDRV Gate drive voltage at DRV –0.3 Self-limiting V VVPC, VVSC Voltage range, VPC, VSC –0.3 4.5 V TJ Operating junction temperature range –55 150 °C TL Lead temperature 0.6 mm from case for 10 seconds 260 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance. (2) JEDEC document JEP157 states that 500-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VVDD Bias supply operating voltage 3.75 28 V CVDD VDD bypass capacitor 0.22 µF TJ Operating junction temperature -40 125 °C VVPC, VVSC Operating range –0.3 2.2 V (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) UCC24636 UNIT DBV (SOT23) 6 PINS RθJA Junction-to-ambient thermal resistance 180 °C/W RθJC(top) Junction-to-case (top) thermal resistance 71.2 °C/W RθJB Junction-to-board thermal resistance 44 °C/W ψJT Junction-to-top characterization parameter 5.1 °C/W ψJB Junction-to-board characterization parameter 13.8 °C/W |
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