 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
TPS65290BMRHFR Datasheet(PDF) 7 Page - Texas Instruments |
|
||||||||||||||||||||||||||||||
TPS65290BMRHFR Datasheet(HTML) 7 Page - Texas Instruments |
|
|
7 / 56 page  7 TPS65290 www.ti.com SLVSBY5C – APRIL 2013 – REVISED MARCH 2016 Product Folder Links: TPS65290 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Electrical Characteristics (continued) TJ = –40°C to 125°C, VBAT = 3.6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PWR_BB2 Distribution switch on-resistance from BB_OUT pin to PWR_BB2 pin (single P MOSFET) VI = 3.6 V, VBB = 4.5 V, TA = 25°C 600 m Ω PWR_LDO1 Distribution switch on-resistance from LDO_OUT pin to PWR_LDO1 pin (single P MOSFET) VI = 3.6 V, VLDO = 2.8 V, TA = 25°C 300 m Ω PWR_LDO2 Distribution switch on-resistance from LDO_OUT pin to PWR_LDO2 pin (single P MOSFET) VI = 3.6 V, VLDO = 2.8 V, TA = 25°C 600 m Ω PWR_MICRO_ LDO Distribution switch on-resistance from LDO_OUT pin to VMICRO pin (single P MOSFET) VI = 3.6 V, VLDO = 2.8 V, TA = 25°C 600 m Ω PWR_VIN Distribution switch on-resistance from VIN pin to PWR_VIN pin (single P MOSFET) VI = 3.6 V, TA = 25°C 1000 m Ω PWR_BB_LDO Distribution switch-on resistance (internal use only) from BB_OUT pin to LDO_OUT pin (back ‑to‑back P MOSFETs) VI = 3.6 V, VBB = 4.5 V, TA = 25°C 1000 m Ω RPULLDOWN Pulldown resistance (connection selectable by EEPROM bit) 1.2 k Ω LOGIC LEVEL OUTPUTS (INT, MISO) VOL Output level low VMICRO = 2.2 V to 2.8 V , Iload = 1 mA 0.4 V VOH Output level high VMICRO = 2.2 V to 2.8 V , Iload = 1 mA VMICRO – 0.4 V LOGIC LEVEL INPUT (CS, MOSI, CLK, SDA SCK) VIH Input high level VMICRO = 2.2 V to 2.8 V 0.67 × VMICRO V VIL Input low level VMICRO = 2.2 V to 2.8 V 0.33 × VMICRO V VHYS Input hysteresis 10 mV RPULLUP Pullup resistor to VMICRO I2C mode enabled 10 k Ω RPULLDOWN Pulldown resistor to GND SPI mode enabled 100 k Ω THERMAL SHUTDOWN FOR BUCK-BOOST CIRCUIT TTRIP_BB Buck-boost thermal protection trip point 141 °C THYST_BB Buck-boost thermal protection hysteresis 12 °C CENTRAL THERMAL SHUTDOWN TTRIP_IC Thermal protection trip point Rising temperature 160 °C THYST_IC Thermal protection hysteresis 20 °C 7.6 Timing Requirements MIN NOM MAX UNIT tSTR_BB Start-up time 500 µs tSTRLDO Start-up time, bandgap already enabled 200 µs |
Similar Part No. - TPS65290BMRHFR |
|
Similar Description - TPS65290BMRHFR |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
