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ADG5413FBCPZ-RL7 Datasheet(PDF) 10 Page - Analog Devices

Part # ADG5413FBCPZ-RL7
Description  Fault Protection and Detection, 10 ohm RON, Quad SPST Switches
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADG5413FBCPZ-RL7 Datasheet(HTML) 10 Page - Analog Devices

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ADG5412F/ADG5413F
Data Sheet
Rev. B | Page 10 of 28
Parameter
+25°C
−40°C to
+85°C
−40°C to
+125°C
Unit
Test Conditions/Comments
DYNAMIC CHARACTERISTICS1
tON
400
ns typ
RL = 300 Ω, CL = 35 pF
490
520
545
ns max
VS = 18 V, see Figure 47
tOFF
375
ns typ
RL = 300 Ω, CL = 35 pF
460
485
510
ns max
VS = 18 V, see Figure 47
Break-Before-Make Time Delay, tD
(ADG5413F Only)
285
ns typ
RL = 300 Ω, CL = 35 pF
195
ns min
VS1 = VS2 = 18 V, see Figure 46
Overvoltage Response Time, tRESPONSE
250
ns typ
RL = 1 kΩ, CL = 2 pF, see Figure 41
350
360
375
ns max
Overvoltage Recovery Time, tRECOVERY
1500
ns typ
RL = 1 kΩ, CL = 2 pF, see Figure 42
2000
2300
2700
ns max
Interrupt Flag Response Time, tDIGRESP
85
115
ns typ
CL = 10 pF, see Figure 43
Interrupt Flag Recovery Time, tDIGREC
60
85
µs typ
CL = 10 pF, see Figure 44
600
ns typ
CL = 10 pF, RPULLUP = 1 kΩ, see Figure 45
Charge Injection, QINJ
−610
pC typ
VS = 18 V, RS = 0 Ω, CL = 1 nF, see
Figure 48
Off Isolation
−70
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see
Figure 35
Channel-to-Channel Crosstalk
−90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see
Figure 36
Total Harmonic Distortion Plus Noise, THD + N
0.001
% typ
RL = 10 kΩ, VS = 18 V p-p, f = 20 Hz to
20 kHz, see Figure 40
−3 dB Bandwidth
270
MHz typ
RL = 50 Ω, CL = 5 pF, see Figure 39
Insertion Loss
−0.75
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see
Figure 39
CS (Off)
12
pF typ
VS = 18 V, f = 1 MHz
CD (Off)
11
pF typ
VS = 18 V, f = 1 MHz
CD (On), CS (On)
23
pF typ
VS = 18 V, f = 1 MHz
POWER REQUIREMENTS
VDD = 39.6 V, VSS = 0 V, digital inputs =
0 V, 5 V, or VDD
Normal Mode
IDD
0.9
mA typ
1.2
1.3
mA max
IGND
0.4
mA typ
0.55
0.6
mA max
ISS
0.5
mA typ
0.65
0.7
mA max
Fault Mode
VS = +55 V, −40 V
IDD
1.2
mA typ
1.6
1.8
mA max
IGND
0.8
mA typ
1.0
1.1
mA max
ISS
0.5
mA typ
1.0
1.8
mA max
VDD
8
V min
GND = 0 V
44
V max
GND = 0 V
1
Guaranteed by design; not subject to production test.


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