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LM5105SDX Datasheet(PDF) 4 Page - Texas Instruments

Part # LM5105SDX
Description  100V Half Bridge Gate Driver With Programmable Dead-Time
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM5105SDX Datasheet(HTML) 4 Page - Texas Instruments

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4
LM5105
SNVS349D – FEBRUARY 2005 – REVISED MARCH 2016
www.ti.com
Product Folder Links: LM5105
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test
conditions, see the Electrical Characteristics.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3)
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15V. For example, if VDD
= 10V, the negative transients at HS must not exceed -5V.
6 Specifications
6.1 Absolute Maximum Ratings
See
(1) (2)
VDD to VSS
–0.3V to +18V
HB to HS
–0.3V to +18V
IN and EN to VSS
–0.3V to VDD + 0.3V
LO to VSS
–0.3V to VDD + 0.3V
HO to VSS
HS – 0.3V to HB + 0.3V
HS to VSS
(3)
−5V to +100V
HB to VSS
118V
RDT to VSS
–0.3V to 5V
Junction Temperature
+150°C
Storage Temperature Range
–55°C to +150°C
(1)
The human body model is a 100 pF capacitor discharged through a 1.5k
Ω resistor into each pin. Pin 2, Pin 3 and Pin 4 are rated at
500V.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM) (1)
±2000
V
(1)
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15V. For example, if VDD
= 10V, the negative transients at HS must not exceed -5V.
6.3 Recommended Operating Conditions
VDD
+8V to +14V
HS(1)
–1V to 100V
HB
HS + 8V to HS + 14V
HS Slew Rate
<50V/ns
Junction Temperature
–40°C to +125°C


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