U404 datasheet(1/2 Pages) LINEAR

Part #	U404

Description	LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

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Manufacturer	LINEAR [Linear Integrated Systems]

Direct Link	http://www.linearsystems.com

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Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201123 03/18/2015 Rev#A8 ECN# SST/U401 SST/U406

FEATURES

LOW DRIFT

│VGS1-2/T│= 10µV/ºC TYP.

LOW NOISE

en=6nV/Hz@10Hz TYP.

LOW PINCHOFF

VP=2.5V MAX.

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25 °C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

-55 to +150°C

Operating Junction Temperature

-55 to +150°C

Maximum Voltage and Current for Each Transistor NOTE 1

-VGSS

Gate Voltage to Drain or Source

50V

-VDSO

Drain to Source Voltage

50V

-IG(f)

Gate Forward Current

10mA

Maximum Power Dissipation per side NOTE 2

Device Dissipation TA = 25°C

300mW

MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

U401

U402

U403

U404

U405

U406 UNITS

CONDITIONS

│VGS1-2/T│max.

Drift vs. Temperature

10

25

40

80

µV/ºC

VDG = 10V, ID = 200µA

TA = -55ºC to +125ºC

│VGS1-2│max.

Offset Voltage

5

10

15

20

40

mV

VDG = 10V, ID = 200µA

ELECTRICAL CHARACTERISTICS TA = 25ºC (unless otherwise noted) NOTE 3

SYMBOL

CHARACTERISTIC

MIN.

TYP.

MAX.

UNITS

CONDITIONS

BVGSS

Breakdown Voltage

-50

-60

--

V

VDS= 0

ID= 1nA

BVG1G2

Gate-to-Gate Breakdown

±50

--

V

IG= ±1µA

ID= 0,

IS = 0

TRANSCONDUCTANCE

Gfss

Full Conduction

2000

--

7000

µS

VDG= 10V

VGS= 0

f = 1kHz

Gfs

Typical Operation

1000

--

2000

µS

VDG= 15V

ID= 200µA f = 1kHz

│Gfs1/Gfs2│

Mismatch

0.97

--

1.0

IDSS

Saturation Drain Current

0.5

--

10

mA

VDG= 10V

VGS= 0

IDSS1

IDSS2

Saturation Current Ratio

0.9

0.98

1.0

GATE VOLTAGE

VGS(off) or VP

Pinchoff Voltage

-0.5

--

-2.5

V

VDS= 15V

ID= 1nA

VGS

Operating Range

--

-2.3

V

VDS= 15V

ID= 200µA

GATE CURRENT

IG

Operating

--

-4

-15

pA

VDG= 15V

ID= 200µA

IG

High Temperature

--

-10

nA

TA=+125ºC

IGSS

Gate Reverse Current

--

-100

pA

VGS=-30v, VDS= 0V

IG1G2

Gate to Gate Isolation Current

--

±1.0

µA

VG1-VG2= ±50V, ID= IS= 0

SST/U401

– SST/U406

LOW NOISE LOW DRIFT

MONOLITHIC DUAL N-CHANNEL

JFET AMPLIFIER

TO-71

Top View

SOIC

Top View

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