Linear Integrated Systems

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Doc 201150 04/02/2015 Rev#A19 ECN# LSK189

FEATURES

ULTRA LOW NOISE

√Hz

LOW INPUT CAPACITANCE

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to +150°C

Junction Operating Temperature

-55 to +150°C

Maximum Power Dissipation

Continuous Power Dissipation TA=25°C

Maximum Currents

Gate Forward Current

Maximum Voltages

Gate to Source

Gate to Drain

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNITS

CONDITIONS

Gate to Source Breakdown Voltage

-60

V

Gate to Source Pinch-off Voltage

-1.5

-3.5

V

Gate to Source Operating Voltage

-0.5

-3.5

V

Drain to Source Saturation Current

2.5

5

15

mA

Gate Operating Current

-2

-25

pA

-0.8

-10

nA

TA=125°C

Gate to Source Leakage Current

-100

pA

Full Conductance Transconductance

1500

µS

1000

1500

µS

Full Output Conductance

40

µS

Output Conductance

1.8

2.7

µS

NF

Noise Figure

0.5

dB

= 10MΩ,

f = 100Hz, NBW = 6Hz

Noise Voltage

1.8

2.0

nV/

√Hz

NBW = 1Hz

Noise Voltage

2.8

3.5

nV/

√Hz

NBW = 1Hz

Common Source Input Capacitance

4

8

pF

Common Source Reverse Transfer Cap.

3

pF

LSK189

LOW NOISE, LOW CAPACITANCE

SINGLE N-CHANNEL JFET

TO 92

TOP VIEW

SOT-23

TOP VIEW

* For equivalent monolithic dual, see LSK489