PE42020

UltraCMOS® True DC RF Switch

Page 2

DOC-23814-3 – (12/2014)

www.psemi.com

Absolute Maximum Ratings

extended periods may reduce reliability.

ESD Precautions

When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.

Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to

Latch-up Immunity

Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.

Parameter/Condition

Min

Max

Unit

10

17

V

–17

–10

V

Digital input voltage (CTRL, LS, LZ)

–0.3

3.6

V

RF input power (RFC–RFX), 50

Ω

0–40 MHz

≥40–8000 MHz

38

dBm

dBm

Storage temperature range

–65

+150

°C

1000

V

150

V

1000

V

Notes:

1) Human body model (MIL-STD 883 Method 3015).

2) Machine model (JEDEC JESD22-A115).

3) Charged device model (JEDEC JESD22-C101).