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BT139-800E Datasheet(PDF) 4 Page - NXP Semiconductors |
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BT139-800E Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  9397 750 13437 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 03 — 23 September 2004 4 of 12 Philips Semiconductors BT139 series E Triacs; sensitive gate tp ≤ 20 ms. (1) dIT/dt limit. (2) T2 − G+ quadrant. Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values. f = 50 Hz; Tmb ≤ 99 °C. (1) Tmb = 99 °C. Fig 4. RMS on-state current as a function of surge duration; maximum values. Fig 5. RMS on-state current as a function of mounting base temperature; maximum values. 001aab092 T (ms) 10−2 102 10 10−1 1 102 103 ITSM (A) 10 T IT ITSM t Tj(initial) = 25 °C max (2) (1) surge duration (s) 10−2 10 1 10−1 001aab090 20 30 10 40 50 IT(RMS) (A) 0 Tmb (°C) −50 150 100 050 001aab091 10 5 15 20 IT(RMS) (A) 0 (1) |
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