ADN8833 datasheet(3/23 Pages) AD

Part #	ADN8833

Description	Ultracompact, 1 A Thermoelectric Cooler (TEC) Driver for Digital Control Systems

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Data Sheet

ADN8833

SPECIFICATIONS

VIN = 2.7 V to 5.5 V, TJ = −40°C to +125°C for minimum/maximum specifications, and TA =25°C for typical specifications, unless

otherwise noted.

Table 2.

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

POWER SUPPLY

Driver Supply Voltage

VPVIN

WLCSP

2.7

5.5

V

VPVINL, VPVINS

LFCSP

2.7

5.5

V

Controller Supply Voltage

VVDD

2.7

5.5

V

Supply Current

IVDD

PWM not switching

2.1

3.5

mA

Shutdown Current

ISD

EN/SY = AGND or VLIM/SD = AGND

350

700

µA

Undervoltage Lockout (UVLO)

VUVLO

VVDD rising

2.45

2.55

2.65

V

UVLO Hysteresis

UVLOHYST

80

90

100

mV

REFERENCE VOLTAGE

VVREF

IVREF = 0 mA to 10 mA

2.475

2.50

2.525

V

LINEAR OUTPUT

Output Voltage

VLDR

ILDR = 0 A

Low

0

V

High

VPVIN

V

Maximum Source Current

ILDR_SOURCE

TJ = −40°C to +125°C

1.0

A

Maximum Sink Current

ILDR_SINK

TJ = −40°C to +125°C

1.0

A

On Resistance

ILDR = 0.6 A

P-MOSFET

RDS_PL(ON)

WLCSP, VPVIN = 5.0 V

35

50

mΩ

WLCSP, VPVIN = 3.3 V

44

60

mΩ

LFCSP, VPVIN = 5.0 V

50

65

mΩ

LFCSP, VPVIN = 3.3 V

55

75

mΩ

N-MOSFET

RDS_NL(ON)

WLCSP, VPVIN = 5.0 V

31

50

mΩ

WLCSP, VPVIN = 3.3 V

40

55

mΩ

LFCSP, VPVIN = 5.0 V

45

70

mΩ

LFCSP, VPVIN = 3.3 V

50

80

mΩ

Leakage Current

P-MOSFET

ILDR_P_LKG

0.1

10

µA

N-MOSFET

ILDR_N_LKG

0.1

10

µA

Linear Amplifier Gain

ALDR

40

V/V

LDR Short-Circuit Threshold

ILDR_SH_GNDL

LDR short to PGNDL, enter hiccup

2.2

A

ILDR_SH_PVIN

LDR short to PVIN, enter hiccup

−2.2

A

Hiccup Cycle

THICCUP

15

ms

PWM OUTPUT

Output Voltage

VSFB

ISFB = 0 A

Low

0.06 × VPVIN

V

High

0.93 × VPVIN

V

Maximum Source Current

ISW_SOURCE

TJ = −40°C to +125°C

1.0

A

Maximum Sink Current

ISW_SINK

TJ = −40°C to +125°C

1.0

A

On Resistance

ISW = 0.6 A

P-MOSFET

RDS_PS(ON)

WLCSP, VPVIN = 5.0 V

47

65

mΩ

WLCSP, VPVIN = 3.3 V

60

80

mΩ

LFCSP, VPVIN = 5.0 V

60

80

mΩ

LFCSP, VPVIN = 3.3 V

70

95

mΩ

N-MOSFET

RDS_NS(ON)

WLCSP, VPVIN = 5.0 V

40

60

mΩ

WLCSP, VPVIN = 3.3 V

45

65

mΩ

LFCSP, VPVIN = 5.0 V

45

75

mΩ

LFCSP, VPVIN = 3.3 V

55

85

mΩ

Leakage Current

Rev. A | Page 3 of 23

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