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V23990-P629-L49Y-PM Datasheet(PDF) 3 Page - Vincotech |
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V23990-P629-L49Y-PM Datasheet(HTML) 3 Page - Vincotech |
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3 / 20 page  V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM datasheet Parameter Symbol Unit V GE [V] or V GS [V] V r [V] or V CE [V] or V DS [V] I C [A] or I F [A] or I D [A] T j [°C] Min Typ Max 25 0,7 1,15 1,4 125 1,11 25 0,92 125 0,82 25 0,009 125 0,012 25 0,05 125 Thermal resistance junction to sink R th(j-s) 1,67 25 5,2 5,8 6,4 150 25 1,7 2,1 2,6 150 2,48 25 0,25 150 25 120 150 none 25 35 150 34,2 25 26,4 150 27,2 25 372,2 150 430,8 25 9,4 150 69,8 25 2,061 150 2,19 25 1,78 150 3,039 Thermal resistance junction to sink R th(j-s) 0,84 25 1 1,46 2 150 1,8 25 300 150 25 7,78 150 8,1 25 9,5 150 9,5 25 0,04 150 0,04 25 0,002 150 0,002 25 2480 150 2790 Thermal resistance junction to sink R th(j-s) 1,88 25 1,65 125 1,58 Thermal resistance junction to sink R th(j-s) phase-change material ʎ=3,4W/mK 2,72 K/W 40 V 3 10 15 0 20 15 15 R goff=16 R gon=16 0 V GE=V CE V CEsat phase-change material ʎ=3,4W/mK E off R gint Q G Turn-off energy loss t d(off) Turn-on energy loss Fall time t f E on Rise time Collector-emitter saturation voltage I GES I CES Input Boost IGBT (T1,T2) V GE(th) t d(on) Collector-emitter cut-off Gate-emitter leakage current I RRM V F I rm f=1MHz C rss C oss C ies f=1MHz Input Boost Inv. Diode (D9,D10) Peak recovery current Reverse recovery charge Peak rate of fall of recovery current Reverse recovered energy Reverse recovery time Reverse leakage current Q rr Gate emitter threshold voltage t r Forward voltage Input capacitance Output capacitance Reverse transfer capacitance Input Boost FWD (D1,D2,D4,D5) Gate charge Turn-on delay time Integrated Gate resistor Turn-off delay time I r Reverse current Bypass Diode (D7,D8) 1500 25 Slope resistance (for power loss calc. only) 25 Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) V F Value Conditions K/W V to r t 25 phase-change material ʎ=3,4W/mK V V mA 0,0015 40 40 25 25 1200 700 phase-change material ʎ=3,4W/mK R gon=16 E rec ( di rf/dt )max t rr 700 25 0 40 Diode forward voltage V F A ns µC mA K/W nA mWs nC ns A/µs V pF K/W µA mWs V V 2360 125 1200 0 230 25 192 copyright Vincotech 3 11 Sep. 2015 / Revision 3 |
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