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10-PZ123BA080ME-M909L18Y Datasheet(PDF) 8 Page - Vincotech |
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10-PZ123BA080ME-M909L18Y Datasheet(HTML) 8 Page - Vincotech |
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8 / 16 page  10-PZ123BA080ME-M909L18Y Figure 17 D1, D2, D3, D4, D5, D6 FWD Figure 18 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 4 Ω VGS = 16 V Figure 19 T1, T2, T3, T4, T5, T6 MOSFET Figure 20 D1, D2, D3, D4, D5, D6 FWD IGBT/MOSFET transient thermal impedance FWD transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) At At D = tp / T D = tp / T RthJH = 1,72 K/W RthJH = 1,88 K/W R (C/W) Tau (s) R (C/W) Tau (s) 1,42E-01 1,02E+00 5,58E-02 6,96E+00 7,14E-01 1,29E-01 1,47E-01 5,43E-01 5,71E-01 5,47E-02 8,94E-01 7,92E-02 1,68E-01 3,53E-03 4,33E-01 1,33E-02 1,23E-01 5,32E-04 2,94E-01 3,03E-03 5,99E-02 6,32E-04 T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 IGBT thermal model values FWD thermal model values 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 35 R Gon ( Ω) dI0/dt dIrec/dt t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 I C (A) dI0/dt dIrec/dt copyright Vincotech 8 Revision: 2 |
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