SP8K33

Transistors

1/4

4V Drive Nch+Nch MOSFET

SP8K33

Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small surface Mount Package (SOP8).

Application

Switching

Packaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

SP8K33

TB

2500

Type

Absolute maximum ratings (Ta=25°C)

<It is the same ratings for the Tr1 and Tr2.>

∗1

∗1

∗2

Parameter

V

Symbol

V

A

A

A

A

W/TOTAL

°C

Tch

°C

Tstg

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

Continuous

Source current

(Body diode)

Pulsed

∗1 Pw 10µs, Duty cycle 1%

∗2 Mounted on a ceramic board.

60

±20

±5.0

±20

1.0

20

2.0

150

−55 to +150

Limits

Each lead has same dimensions

SOP8

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(1) (2) (3) (4)

(8) (7) (6) (5)

∗2

∗1

∗2

∗1

(8)

(7)

(1)

(2)

(6)

(5)

(3)

(4)

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

Dimensions (Unit : mm)

Inner circuit

SP8K33FRA

SP8K33FRA

SP8K33FRA

AEC-Q101 Qualified