FJP2145 datasheet(4/13 Pages) FAIRCHILD

Part #	FJP2145

Description	ESBCTM Rated NPN Power Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FJP2145 Rev. 1.1

4

ESBC-Configured Electrical Characteristics(6)

Values are at TA = 25°C unless otherwise noted.

Note:

6. A typical FDC655 MOSFET was used for the specifications above. Values could vary if other Fairchild MOSFETs

are used.

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

fT

Current Gain Bandwidth

Product

IC = 0.1 A,VCE = 10 V

28.40

MHz

Itf

Inductive Current Fall Time

VCC = 100 V, VGS = 10 V, RG = 4 7Ω,

VClamp = 500 V, IC = 0.5 A,

IB = 0.05 A, HFE = 10, LC = 166 μH,

SRF = 684 kHz

95

ns

ts

Inductive Storage Time

0.13

ns

Vtf

Inductive Voltage Fall Time

135

ns

Vtr

Inductive Voltage Rise Time

80

ns

tc

Inductive Crossover Time

115

ns

Itf

Inductive Current Fall Time

VCC = 100 V, VGS = 10 V, RG = 47 Ω,

VClamp = 500 V, IC = 1 A,

IB = 0.2 A, HFE = 5, LC = 166 μH,

SRF = 684 kHz

50

ns

ts

Inductive Storage Time

0.34

ns

Vtf

Inductive Voltage Fall Time

150

ns

Vtr

Inductive Voltage Rise Time

60

ns

tc

Inductive Crossover Time

95

ns

VCSW

Maximum Collector-Source

Voltage at Turn-off without

Snubber

hFE = 5, IC = 2 A

1100

V

IGS(OS)

Gate-Source Leakage

Current

VGS = ± 20 V

1nA

VCS(ON)

Collector-Source On

Voltage

VGS = 10 V, IC = 2 A, IB = 0.67 A, hFE = 3

0.202

V

VGS = 10 V, IC = 1 A, IB = 0.33 A, hFE = 3

0.111

V

VGS = 10 V, IC = 0.5 A, IB = 0.17 A, hFE = 3

0.067

V

VGS = 10 V, IC = 0.3 A, IB = 0.06 A, hFE = 5

0.060

V

VGS(th)

Gate Threshold Voltage

VBS = VGS, IB = 250 μA

1.9

V

Ciss

Input Capacitance

(VGS = VCB = 0)

VCS = 25 V, f = 1 MHz

470

pF

QGS(tot)

Gate-Source Change

VCB = 0

VGS = 10 V, IC = 6.3 A, VCS = 25 V

9nC

RDS(ON)

Static Drain-to-Source

On Resistance

VGS = 10 V, ID = 6.3 A

21

m

Ω

VGS = 4.5 V, ID = 5.5 A

26

m

Ω

VGS = 10 V, ID = 6.3 A, TJ = 125°C

30

m

Ω

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