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FNA51560T3 Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FNA51560T3 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 15 page ©2014 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FNA51560T1/T3 Rev. C0 Absolute Maximum Ratings (T J = 25°C, unless otherwise specified.) Inverter Part Note: 5. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 55 product is 150 C. Control Part Total System Thermal Resistance Note: 6. For the measurement point of case temperature (TC), please refer to Figure 2. Symbol Parameter Conditions Rating Unit VPN Supply Voltage Applied between P - NU, NV, NW 450 V VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW 500 V VCES Collector - Emitter Voltage 600 V ± IC Each IGBT Collector Current TC = 25°C, TJ < 150°C 15 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ < 150°C, Under 1 ms Pulse Width 30 A PC Collector Dissipation TC = 25°C per Chip 27 W TJ Operating Junction Temperature (Note 5) -40 ~ 150 °C Symbol Parameter Conditions Rating Unit VDD Control Supply Voltage Applied between VDD - COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VDD +0.3 V VF Fault Supply Voltage Applied between VF - COM -0.3 ~ VDD +0.3 V IF Fault Current Sink Current at VF pin 5 mA VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VDD +0.3 V Symbol Parameter Conditions Rating Unit VPN(PROT) Self Protection Supply Voltage Limit (Short Circuit Protection Capability) VDD = VBS = 13.5 ~ 16.5 V TJ = 150°C, Non-Repetitive, < 2 s 400 V TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate 1500 Vrms Symbol Parameter Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT part (per 1 / 6 module) - - 4.55 °C / W Rth(j-c)F Inverter FWD part (per 1 / 6 module) - - 5.4 °C / W |
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