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TDA21106 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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TDA21106 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 7 page CoreControl TM Data Sheet TDA21106 Rev 2.0 Page 2 Apr, 2004 General Description The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to TDA21101G and HIP6601B. In addition it provides protection features as well as a three-state mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications. Target application The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of the driver´s capabilities in high-efficiency, high-density synchronous DC/DC converters that operate at high switching frequencies, e.g. in multi-phase converters for CPU supplies on motherboards and VRM´s but also in motor drive and class-D amplifier type applications. Absolute Maximum Ratings At Tj = 25 °C, unless otherwise specified Value Parameter Symbol Min. Max. Unit Voltage supplied to ‘VCC’ pin; DC VVCC -0.3 25 Voltage supplied to ‘PVCC’ pin; DC VPVCC -0.3 25 Voltage supplied to ‘PWM’ pin VPWM -0.3 5,5 Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’ VBOOT – VPHASE -0,3 25 Voltage supplied to ‘BOOT’ pin referenced to ‘GND’ VBOOT -0,3 45 Voltage rating at ‘PHASE’ pin, DC VPHASE -1 25 Voltage rating at ‘PHASE’ pin, tpulse_max = 500ns Max Duty Cycle = 2% VPHASE -20 30 Voltage supplied to GATEHS pin referenced to ‘PHASE’ Tpulse_max < 100ns, Energy < 2uJ VGATEHS -3.5 VBOOT +0.3 Voltage supplied to GATELS pin referenced to ‘GND’ Tpulse_max < 100ns, Energy < 2uJ VGATELS -5 VVCC +0.3 V Junction temperature TJ -25 150 Storage temperature TS -55 150 °C ESD Rating; Human Body Model 4 KV IEC climatic category; DIN EN 60068-1 55/150/56 - |
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