Data Sheet

TDA21106

Rev 2.0

Page 2

Apr, 2004

General Description

The dual high speed driver is designed to drive a wide range of N-Channel low side

and N-Channel high side MOSFETs with varying gate charges. It has a small

propagation delay from input to output, short rise and fall times and the same pin

configuration to be compatible to TDA21101G and HIP6601B. In addition it provides

protection features as well as a three-state mode for efficiency reasons. The high

breakdown voltage makes it suitable for mobile applications.

Target application

The dual high speed driver is designed to work well in half-bridge type circuits where

dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of

the driver´s capabilities in high-efficiency, high-density synchronous DC/DC

converters that operate at high switching frequencies, e.g. in multi-phase converters

for CPU supplies on motherboards and VRM´s but also in motor drive and class-D

amplifier type applications.

Absolute Maximum Ratings

At Tj = 25 °C, unless otherwise specified

Value

Parameter

Symbol

Min.

Max.

Unit

Voltage supplied to ‘VCC’ pin; DC

-0.3

25

Voltage supplied to ‘PVCC’ pin; DC

-0.3

25

Voltage supplied to ‘PWM’ pin

-0.3

5,5

Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’

-0,3

25

Voltage supplied to ‘BOOT’ pin referenced to ‘GND’

-0,3

45

Voltage rating at ‘PHASE’ pin, DC

-1

25

Max Duty Cycle = 2%

-20

30

+0.3

-5

+0.3

V

Junction temperature

-25

150

Storage temperature

-55

150

°C

ESD Rating; Human Body Model

4

KV

IEC climatic category; DIN EN 60068-1

55/150/56

-