NXP Semiconductors

PMZ130UNE

20 V, N-channel Trench MOSFET

PMZ130UNE

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Product data sheet

12 March 2015

4 / 14

aaa-016069

10

1

1

10

(A)

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

315

360

K/W

thermal resistance

from junction to

ambient

in free air

[2]

-

145

165

K/W

thermal resistance

from junction to solder

point

-

17

20

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.