10-FZ06NMA080SH-M269F datasheet(4/26 Pages) VINCOTECH

Part #	10-FZ06NMA080SH-M269F

Description	Mixed voltage component topology

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Manufacturer	VINCOTECH [Vincotech]

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10-FZ12NMA080SH-M269F

datasheet

Parameter

Symbol

Unit

VGE [V] or

VGS [V]

Vr [V]

or

VCE [V] or

VDS [V]

IC [A] or

IF [A] or

ID [A]

Tj

Min

Typ

Max

Value

Conditions

Characteristic Values

Tj=25°C

5

5,8

6,5

Tj=125°C

Tj=25°C

1,1

1,54

2

Tj=125°C

1,75

Tj=25°C

100

Tj=125°C

Tj=25°C

650

Tj=125°C

Tj=25°C

99

Tj=125°C

102

Tj=25°C

10

Tj=125°C

13

Tj=25°C

183

Tj=125°C

206

Tj=25°C

80

Tj=125°C

99

Tj=25°C

0,49

Tj=125°C

0,72

Tj=25°C

1,16

Tj=125°C

1,50

Thermal resistance chip to heatsink per chip

RthJH

Thermal grease

thickness≤50um

λ = 1 W/mK

1,30

K/W

Tj=25°C

1,5

2,23

3,4

Tj=125°C

1,91

Tj=25°C

100

Tj=125°C

Tj=25°C

64

Tj=125°C

79

Tj=25°C

29

Tj=125°C

172

Tj=25°C

2,7

Tj=125°C

6,1

di(rec)max

Tj=25°C

8246

/dt

Tj=125°C

4626

Tj=25°C

0,74

Tj=125°C

1,79

Thermal resistance chip to heatsink per chip

RthJH

Thermal grease

thickness≤50um

λ = 1 W/mK

1,55

K/W

B

Vincotech NTC Reference

3996

K

3950

K

B-value

B(25/100) Tol. ±3%

T=25°C

B-value

B(25/50) Tol. ±3%

µA

ns

A/µs

A

mWs

µC

V

%

22000

T=25°C

2

5

-5

93

Tj=25°C

50

0,0008

Turn-off energy loss per pulse

QGate

Eoff

Turn-on energy loss per pulse

Neutral Point IGBT

Peak reverse recovery current

Reverse recovered charge

Gate-emitter leakage current

Gate emitter threshold voltage

Gate charge

Input capacitance

Output capacitance

Fall time

Turn-off delay time

Collector-emitter saturation voltage

Collector-emitter cut-off incl diode

Turn-on delay time

Rise time

Integrated Gate resistor

ICES

VGE(th)

VCE(sat)

Half Bridge FWD

Reverse transfer capacitance

f=1MHz

Crss

Coss

Cies

480

mW/K

ns

mWs

0

pF

41

20

15

nC

50

Tj=25°C

P

mW

200

Rated resistance

Power dissipation constant

Deviation of R100

Power dissipation

∆R/R

R100=1486

R

tf

Eon

td(off)

tr

IGES

IRRM

Rgoff=8

Rgon=8

td(on)

Rgint

350

±15

VCE=VGE

±15

15

0

uA

nA

V

Reverse recovery energy

trr

Qrr

Erec

Reverse recovery time

Peak rate of fall of recovery current

Thermistor

Diode forward voltage

Reverse leakage current

VF

Ir

Rgon=8

41

30

600

1200

350

25

T=25°C

T=100°C

200

3140

310

none

copyright

by Vincotech

4

Revision: 4

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10-FZ06NMA080SH-M269F Datasheet(PDF) 4 Page - Vincotech

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