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10-PZ12NMA080SH01-M260FY Datasheet(PDF) 7 Page - Vincotech |
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10-PZ12NMA080SH01-M260FY Datasheet(HTML) 7 Page - Vincotech |
7 / 27 page 10-FZ12NMA080SH01-M260F 10-PZ12NMA080SH01-M260FY datasheet Figure 9 IGBT Figure 10 IGBT Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(I C) t = f(R G) With an inductive load at With an inductive load at T j = 125 °C T j = 125 °C V CE = 350 V V CE = 350 V V GE = ±15 V V GE = ±15 V R gon = 4 I C = 56 A R goff = 4 Figure 11 FWD Figure 12 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of IGBT turn on gate resistor t rr = f(I c) t rr = f(R gon) At At T j = 25/125 °C T j = 25/125 °C V CE = 350 V V R = 350 V V GE = ±15 V I F = 56 A R gon = 4 V GE = ±15 V Half Bridge IGBT and Neutral Point FWD Half Bridge tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 20 40 60 80 100 I C (A) trr High T trr Low T 0,00 0,03 0,06 0,09 0,12 0,15 0 5 10 15 20 R gon ( ) tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 5 10 15 20 R G ( ) trr High T trr Low T 0,00 0,02 0,04 0,06 0,08 0,10 0 20 40 60 80 100 I C (A) copyright Vincotech 7 13 May. 2015 / Revision 10 |
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