Electronic Components Datasheet Search |
|
10-FZ06NRA084FP02-P969F68 Datasheet(PDF) 4 Page - Vincotech |
|
10-FZ06NRA084FP02-P969F68 Datasheet(HTML) 4 Page - Vincotech |
4 / 7 page 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 3,5 4,5 6 Tj=150°C Tj=25°C 1,9 2,5 Tj=150°C 2,1 Tj=25°C 0,25 Tj=150°C Tj=25°C 400 Tj=150°C Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness≤50um λ = 1 W/mK 0,85 K/W * see dynamic characteristic at Buck MosFET **additional value stands for built-in capacitor Tj=25°C 1,50 1,7 Tj=125°C 1,82 Tj=25°C Tj=125°C tbd Tj=25°C Tj=125°C tbd Tj=25°C Tj=125°C tbd di(rec)max Tj=25°C /dt Tj=125°C tbd Tj=25°C Tj=125°C tbd 75 600 0 0,00025 75 24 75 Tj=25°C ±15 diF/dt=tbd A/us 300 ±15 0 VCE=VGE 0 15 f=1MHz VGE(th) Coss VCE(sat) ICES IGES QGate Cies Input capacitance Reverse recovery time Peak rate of fall of recovery current Gate-emitter leakage current Integrated Gate resistor Characteristic Values Value Conditions pF nF mA ns V Tj=25°C A/µs None 94 mWs V nA Buck IGBT * Collector-emitter cut-off current incl. Diode Gate emitter threshold voltage Collector-emitter saturation voltage Output capacitance 4000 400 30 400 115 Rgint Crss VF 20 Reverse recovered energy IRRM Qrr trr Reverse recovered charge Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Buck Diode Erec A µC nC V Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness≤50um λ = 1 W/mK 1,91 K/W Tj=25°C 90 Tj=125°C Tj=25°C 2,4 3 3,5 Tj=125°C Tj=25°C 100 Tj=125°C Tj=25°C 5000 Tj=125°C Tj=25°C tbd. Tj=125°C tbd. Tj=25°C tbd. Tj=125°C tbd. Tj=25°C tbd. Tj=125°C tbd. Tj=25°C tbd. Tj=125°C tbd. Tj=25°C tbd. Tj=125°C tbd. Tj=25°C tbd. Tj=125°C tbd. ** see schematic of the Gate-complex at characteristic figures Tj=25°C 0,0012 20 10 10 0 300 ±15 25 f=1MHz VDS=VGS Rgon=X Thermal grease thickness≤50um λ = 1 W/mK Rgoff=X V(GS)th Igss tr Coss Eon Qgd Qg Qgs Input capacitance Gate to drain charge Gate threshold voltage Eoff Ciss Gate to source charge Turn off delay time Rise Time RthJH Zero Gate Voltage Drain Current Gate to Source Leakage Current Turn On Delay Time V nC nA ns mWs 2660 61 18 0 480 600 75 18 Tj=25°C 0 Static drain to source ON resistance Buck MOSFET Rds(on) Turn-on energy loss per pulse Fall time Total gate charge td(OFF) td(ON) Turn-off energy loss per pulse Idss tf Thermal resistance chip to heatsink per chip Output capacitance 1,29 14 154 119 pF m K/W uA copyright Vincotech 4 Revision: 1 |
Similar Part No. - 10-FZ06NRA084FP02-P969F68 |
|
Similar Description - 10-FZ06NRA084FP02-P969F68 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |