10-FZ06NRA084FP02-P969F68

10-PZ06NRA084FP02-P969F68Y

target datasheet

Parameter

Symbol

Unit

or

Min

Typ

Max

Tj=25°C

3,5

4,5

6

Tj=150°C

Tj=25°C

1,9

2,5

Tj=150°C

2,1

Tj=25°C

0,25

Tj=150°C

Tj=25°C

400

Tj=150°C

Thermal resistance chip to heatsink per chip

Thermal grease

thickness≤50um

λ = 1 W/mK

0,85

K/W

* see dynamic characteristic at Buck MosFET

**additional value stands for built-in capacitor

Tj=25°C

1,50

1,7

Tj=125°C

1,82

Tj=25°C

Tj=125°C

tbd

Tj=25°C

Tj=125°C

tbd

Tj=25°C

Tj=125°C

tbd

di(rec)max

Tj=25°C

/dt

Tj=125°C

tbd

Tj=25°C

Tj=125°C

tbd

75

600

0

0,00025

75

24

75

Tj=25°C

±15

diF/dt=tbd A/us

300

±15

0

0

15

f=1MHz

Input capacitance

Reverse recovery time

Peak rate of fall of recovery current

Gate-emitter leakage current

Integrated Gate resistor

Characteristic Values

Value

Conditions

pF

nF

mA

ns

V

Tj=25°C

A/µs

None

94

mWs

V

nA

Buck IGBT *

Collector-emitter cut-off current incl. Diode

Gate emitter threshold voltage

Collector-emitter saturation voltage

Output capacitance

4000

400

30

400

115

20

Reverse recovered energy

Reverse recovered charge

Peak reverse recovery current

Reverse transfer capacitance

Diode forward voltage

Gate charge

Buck Diode

Erec

A

µC

nC

V

Thermal resistance chip to heatsink per chip

Thermal grease

thickness≤50um

λ = 1 W/mK

1,91

K/W

Tj=25°C

90

Tj=125°C

Tj=25°C

2,4

3

3,5

Tj=125°C

Tj=25°C

100

Tj=125°C

Tj=25°C

5000

Tj=125°C

Tj=25°C

tbd.

Tj=125°C

tbd.

Tj=25°C

tbd.

Tj=125°C

tbd.

Tj=25°C

tbd.

Tj=125°C

tbd.

Tj=25°C

tbd.

Tj=125°C

tbd.

Tj=25°C

tbd.

Tj=125°C

tbd.

Tj=25°C

tbd.

Tj=125°C

tbd.

** see schematic of the Gate-complex at characteristic figures

Tj=25°C

0,0012

20

10

10

0

300

±15

25

f=1MHz

Rgon=X

Thermal grease

thickness≤50um

λ = 1 W/mK

Rgoff=X

Input capacitance

Gate to drain charge

Gate threshold voltage

Gate to source charge

Turn off delay time

Rise Time

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Turn On Delay Time

V

nC

nA

ns

mWs

2660

61

18

0

480

600

75

18

Tj=25°C

0

Static drain to source ON resistance

Buck MOSFET

Turn-on energy loss per pulse

Fall time

Total gate charge

Turn-off energy loss per pulse

Thermal resistance chip to heatsink per chip

Output capacitance

1,29

14

154

119

pF

m

K/W

uA

copyright Vincotech

4

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