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10-FY12NMA160SH-M420F Datasheet(PDF) 5 Page - Vincotech |
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10-FY12NMA160SH-M420F Datasheet(HTML) 5 Page - Vincotech |
5 / 30 page 10-FY12NMA160SH-M420F 10-PY12NMA160SH-M420FY preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Value Conditions Characteristic Values Tj=25°C 5 5,8 6,5 Tj=125°C Tj=25°C 1,05 1,58 1,85 Tj=125°C 1,8 Tj=25°C 0,0052 Tj=125°C Tj=25°C 1200 Tj=125°C none Tj=25°C 103 Tj=125°C 103 Tj=25°C 16,8 Tj=125°C 19,2 Tj=25°C 158 Tj=125°C 179 Tj=25°C 44 Tj=125°C 64 Tj=25°C 1,06 Tj=125°C 1,52 Tj=25°C 2,48 Tj=125°C 3,32 Thermal resistance chip to heatsink per chip RthJH 1,01 Thermal resistance chip to case per chip RthJC 0,67 Tj=25°C 1,00 1,61 2,15 Tj=125°C 1,57 Thermal resistance chip to heatsink per chip RthJH 3,43 Coupled thermal resistance inverter transistor-diode RthJC 2,27 Tj=25°C 1,50 2,47 3,40 Tj=125°C 2,11 Tj=25°C 200 Tj=125°C Tj=25°C 107 Tj=125°C 142 Tj=25°C 51 Tj=125°C 69 Tj=25°C 6,24 Tj=125°C 12,71 di(rec)max Tj=25°C 5985 /dt Tj=125°C 2890 Tj=25°C 1,71 Tj=125°C 3,61 Thermal resistance chip to heatsink per chip RthJH 1,15 Thermal resistance chip to case per chip RthJC 0,76 per module λPaste=1W/(m·K)/λgrease=1W/(m·K) Tc=25°C, per switch Screw M4 - mounting according to valid application note Flow1-4TY-P-*-HI for PressFiT, V23990-P-M101-*-31 for SolderPin Weight G Rcc'1+EE' Mounting torque M Chip module lead resistance, terminals -chip Module Properties V23990-P-M107-*-31 Nm g 42,28 2,2 Module stray inductance LsCE 2 nH tbd. m 5 Thermal resistance, case to heatsink RthCH K/W tbd. 2 -5 100 pF Tj=25°C K/W A/µs A V µA ns K/W K/W mWs µC V % nF 100 22000 Integrated Gate resistor Input capacitance Output capacitance Crss Coss Cies Reverse transfer capacitance Rgint IGES Turn-on energy loss per pulse Fall time Turn-off delay time Collector-emitter saturation voltage Collector-emitter cut-off incl diode Turn-on delay time Rise time Gate-emitter leakage current ICES VCE(sat) Peak reverse recovery current VGE(th) Gate emitter threshold voltage NP IGBT tr td(on) 15 Eon Eoff tf ±15 Gate charge QGate td(off) Turn-off energy loss per pulse Thermal grease thickness≤50um λ = 1 W/mK ns µWs 0 100 15 100 Power dissipation P mW 200 Power dissipation constant Rated resistance R ∆R/R R100=1486 Deviation of R25 Halfbridge Diode Rgon=4 V V 0,0016 15 0 mA nA Reverse recovery energy trr Qrr Erec Reverse recovery time Peak rate of fall of recovery current Reverse recovered charge Thermistor C value DC link Capacitor C Reverse leakage current VF Ir VCE=VGE f=1MHz Diode forward voltage VF NP Inverse Diode Diode forward voltage Rgon=4 Rgoff=4 IRRM 20 Thermal grease thickness≤50um λ = 1 W/mK Thermal grease thickness≤50um λ = 1 W/mK 60 350 100 ±15 600 1200 350 480 Tj=25°C T=25°C 620 186 B-value B(25/50) Tol. ±3% Tj=25°C Tj=25°C Tj=25°C T=25°C T=25°C B-value B(25/100) Tol. ±3% Vincotech NTC Reference K nC +5 mW/K B K 400 3950 3996 6280 DC+ to Neutral and DC- to Neutral copyright Vincotech 5 Revision: 2 |
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