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10-FY12NMA160SH-M420F Datasheet(PDF) 5 Page - Vincotech

Part # 10-FY12NMA160SH-M420F
Description  Common collector neutral connection
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Manufacturer  VINCOTECH [Vincotech]
Direct Link  http://www.vincotech.com
Logo VINCOTECH - Vincotech

10-FY12NMA160SH-M420F Datasheet(HTML) 5 Page - Vincotech

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10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Value
Conditions
Characteristic Values
Tj=25°C
5
5,8
6,5
Tj=125°C
Tj=25°C
1,05
1,58
1,85
Tj=125°C
1,8
Tj=25°C
0,0052
Tj=125°C
Tj=25°C
1200
Tj=125°C
none
Tj=25°C
103
Tj=125°C
103
Tj=25°C
16,8
Tj=125°C
19,2
Tj=25°C
158
Tj=125°C
179
Tj=25°C
44
Tj=125°C
64
Tj=25°C
1,06
Tj=125°C
1,52
Tj=25°C
2,48
Tj=125°C
3,32
Thermal resistance chip to heatsink per chip
RthJH
1,01
Thermal resistance chip to case per chip
RthJC
0,67
Tj=25°C
1,00
1,61
2,15
Tj=125°C
1,57
Thermal resistance chip to heatsink per chip
RthJH
3,43
Coupled thermal resistance inverter transistor-diode
RthJC
2,27
Tj=25°C
1,50
2,47
3,40
Tj=125°C
2,11
Tj=25°C
200
Tj=125°C
Tj=25°C
107
Tj=125°C
142
Tj=25°C
51
Tj=125°C
69
Tj=25°C
6,24
Tj=125°C
12,71
di(rec)max
Tj=25°C
5985
/dt
Tj=125°C
2890
Tj=25°C
1,71
Tj=125°C
3,61
Thermal resistance chip to heatsink per chip
RthJH
1,15
Thermal resistance chip to case per chip
RthJC
0,76
per module
λPaste=1W/(m·K)/λgrease=1W/(m·K)
Tc=25°C, per switch
Screw M4 - mounting according to valid application note
Flow1-4TY-P-*-HI for PressFiT, V23990-P-M101-*-31 for SolderPin
Weight
G
Rcc'1+EE'
Mounting torque
M
Chip module lead resistance, terminals -chip
Module Properties
V23990-P-M107-*-31
Nm
g
42,28
2,2
Module stray inductance
LsCE
2
nH
tbd.
m
5
Thermal resistance, case to heatsink
RthCH
K/W
tbd.
2
-5
100
pF
Tj=25°C
K/W
A/µs
A
V
µA
ns
K/W
K/W
mWs
µC
V
%
nF
100
22000
Integrated Gate resistor
Input capacitance
Output capacitance
Crss
Coss
Cies
Reverse transfer capacitance
Rgint
IGES
Turn-on energy loss per pulse
Fall time
Turn-off delay time
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Turn-on delay time
Rise time
Gate-emitter leakage current
ICES
VCE(sat)
Peak reverse recovery current
VGE(th)
Gate emitter threshold voltage
NP IGBT
tr
td(on)
15
Eon
Eoff
tf
±15
Gate charge
QGate
td(off)
Turn-off energy loss per pulse
Thermal grease
thickness≤50um
λ = 1 W/mK
ns
µWs
0
100
15
100
Power dissipation
P
mW
200
Power dissipation constant
Rated resistance
R
∆R/R
R100=1486
Deviation of R25
Halfbridge Diode
Rgon=4
V
V
0,0016
15
0
mA
nA
Reverse recovery energy
trr
Qrr
Erec
Reverse recovery time
Peak rate of fall of recovery current
Reverse recovered charge
Thermistor
C value
DC link Capacitor
C
Reverse leakage current
VF
Ir
VCE=VGE
f=1MHz
Diode forward voltage
VF
NP Inverse Diode
Diode forward voltage
Rgon=4
Rgoff=4
IRRM
20
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal grease
thickness≤50um
λ = 1 W/mK
60
350
100
±15
600
1200
350
480
Tj=25°C
T=25°C
620
186
B-value
B(25/50)
Tol. ±3%
Tj=25°C
Tj=25°C
Tj=25°C
T=25°C
T=25°C
B-value
B(25/100)
Tol. ±3%
Vincotech NTC Reference
K
nC
+5
mW/K
B
K
400
3950
3996
6280
DC+ to Neutral and DC- to Neutral
copyright Vincotech
5
Revision: 2


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