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10-FY07ZAB050SM-L514B08-3 Datasheet(PDF) 3 Page - Vincotech |
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10-FY07ZAB050SM-L514B08-3 Datasheet(HTML) 3 Page - Vincotech |
3 / 11 page 10-FY07ZAB050SM-L514B08 target datasheet Copyright Vincotech 3 14 Aug. 2015 / Revision 1 H-Bridge Switch Lo/Hi Side DC Capacitor H-Bridge Diode Lo/Hi Side Parameter Symbol Value Unit A Condition Collector-emitter voltage V CES 650 V Collector current I C T j = T jmax T S =80 °C 43 Repetitive peak collector current I CRM t p limited by T jmax 150 A Total power dissipation P tot T j = T jmax T S =80 °C 84 W Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Parameter Symbol Unit Maximum DC voltage V MAX 630 V Operation Temperature T op -55…+125 °C Conditions Value Parameter Symbol Value Unit Conditions Peak Repetitive Reverse Voltage VRRM 650 V Repetitive peak forward current IFRM 100 A DC forward current IF Tj=Tjmax TS=80°C 40 A Power dissipation Ptot Tj=Tjmax TS=80°C 64 W Maximum Junction Temperature Tjmax 175 °C |
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