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PHPT60610NY Datasheet(PDF) 6 Page - NXP Semiconductors |
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PHPT60610NY Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 17 page NXP Semiconductors PHPT60610NY 60 V, 10 A NPN high power bipolar transistor PHPT60610NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 27 May 2015 6 / 17 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VCB = 48 V; IE = 0 A; Tamb = 25 °C - - 100 nA ICBO collector-base cut-off current VCB = 48 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off current VCE = 48 V; VBE = 0 V; Tamb = 25 °C - - 100 nA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A; Tamb = 25 °C - - 100 nA VCE = 2 V; IC = 500 mA; Tamb = 25 °C 240 410 - VCE = 2 V; IC = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 210 400 - VCE = 2 V; IC = 5 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 100 200 - hFE DC current gain VCE = 2 V; IC = 10 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed 50 100 - IC = 1 A; IB = 50 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed - 30 40 mV IC = 5 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 115 160 mV VCEsat collector-emitter saturation voltage - 250 360 mV RCEsat collector-emitter saturation resistance IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 25 36 mΩ IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 0.95 V IC = 5 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 1.2 V VBEsat base-emitter saturation voltage IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 1.4 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 500 mA; Tamb = 25 °C - - 0.8 V td delay time - 20 - ns tr rise time - 180 - ns ton turn-on time - 200 - ns ts storage time - 340 - ns tf fall time - 165 - ns toff turn-off time VCC = 12.5 V; IC = 5 A; IBon = 250 mA; IBoff = -250 mA; Tamb = 25 °C - 505 - ns |
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