PHPT60610NY datasheet(6/17 Pages) NXP

Part #	PHPT60610NY

Description	60 V, 10 A NPN high power bipolar transistor

Download	17 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

6 / 17 page

NXP Semiconductors

PHPT60610NY

60 V, 10 A NPN high power bipolar transistor

PHPT60610NY

All information provided in this document is subject to legal disclaimers.

Product data sheet

27 May 2015

6 / 17

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = 48 V; IE = 0 A; Tamb = 25 °C

-

100

nA

ICBO

collector-base cut-off

current

VCB = 48 V; IE = 0 A; Tj = 150 °C

-

50

µA

ICES

collector-emitter cut-off

current

VCE = 48 V; VBE = 0 V; Tamb = 25 °C

-

100

nA

IEBO

emitter-base cut-off

current

VEB = 7 V; IC = 0 A; Tamb = 25 °C

-

100

nA

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

240

410

-

VCE = 2 V; IC = 1 A; tp ≤ 300 µs;

δ ≤ 0.02 ; Tamb = 25 °C

210

400

-

VCE = 2 V; IC = 5 A; tp ≤ 300 µs;

δ ≤ 0.02 ; Tamb = 25 °C

100

200

-

hFE

DC current gain

VCE = 2 V; IC = 10 A; tp ≤ 300 µs;

δ ≤ 0.02 ; Tamb = 25 °C; pulsed

50

100

-

IC = 1 A; IB = 50 mA; tp ≤ 300 µs;

δ ≤ 0.02 ; Tamb = 25 °C; pulsed

-

30

40

mV

IC = 5 A; IB = 500 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

115

160

mV

VCEsat

collector-emitter

saturation voltage

-

250

360

mV

RCEsat

collector-emitter

saturation resistance

IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs;

δ ≤ 0.02 ; Tamb = 25 °C

-

25

36

mΩ

IC = 1 A; IB = 50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

0.95

V

IC = 5 A; IB = 500 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

1.2

V

VBEsat

base-emitter saturation

voltage

IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs;

δ ≤ 0.02 ; Tamb = 25 °C

-

1.4

V

VBEon

base-emitter turn-on

voltage

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

-

0.8

V

td

delay time

-

20

-

ns

tr

rise time

-

180

-

ns

ton

turn-on time

-

200

-

ns

ts

storage time

-

340

-

ns

tf

fall time

-

165

-

ns

toff

turn-off time

VCC = 12.5 V; IC = 5 A; IBon = 250 mA;

IBoff = -250 mA; Tamb = 25 °C

-

505

-

ns

Similar Part No. - PHPT60610NY

Manufacturer	Part #	Datasheet	Description
Nexperia B.V. All right...	PHPT60610NY	271Kb / 13P	60 V, 10 A NPN high power bipolar transistor 15 January 2019

More results

Similar Description - PHPT60610NY

Manufacturer	Part #	Datasheet	Description
Nexperia B.V. All right...	PHPT60610NY	271Kb / 13P	60 V, 10 A NPN high power bipolar transistor 15 January 2019
NXP Semiconductors	PHPT60610PY	248Kb / 17P	60 V, 10 A PNP high power bipolar transistor 27 May 2015
Nexperia B.V. All right...	PHPT60610PY	269Kb / 13P	60 V, 10 A PNP high power bipolar transistor 15 January 2019
Nexperia B.V. All right...	PHPT60606NY	722Kb / 16P	60 V, 6 A NPN high power bipolar transistor 8 December 2014
NXP Semiconductors	PHPT60606NY	244Kb / 16P	60 V, 6 A NPN high power bipolar transistor 8 December 2014
Nexperia B.V. All right...	PHPT61010NY	720Kb / 16P	100 V, 10 A NPN high power bipolar transistor 20 March 2015
Nexperia B.V. All right...	PHPT60410NY	719Kb / 15P	40 V, 10 A NPN high power bipolar transistor 27 January 2015
NXP Semiconductors	PHPT60410NY	242Kb / 15P	40 V, 10 A NPN high power bipolar transistor 27 January 2015
NXP Semiconductors	PHPT61010NY	242Kb / 16P	100 V, 10 A NPN high power bipolar transistor 20 March 2015
Nexperia B.V. All right...	PHPT60606PY	718Kb / 15P	60 V, 6 A PNP high power bipolar transistor 9 December 2014

More results

PHPT60610NY Datasheet(PDF) 6 Page - NXP Semiconductors

PHPT60610NY Datasheet(HTML) 6 Page - NXP Semiconductors

Similar Part No. - PHPT60610NY

Similar Description - PHPT60610NY

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL