NXP Semiconductors

PHPT60606PY

60 V, 6 A PNP high power bipolar transistor

PHPT60606PY

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Product data sheet

9 December 2014

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8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

-60

V

collector-emitter voltage

open base

-

-60

V

emitter-base voltage

open collector

-

-8

V

collector current

-

-6

A

peak collector current

-

-12

A

base current

-

-800

mA

peak base current

-

-1.2

A

[1]

-

1.35

W

[2]

-

3.25

W

[3]

-

5

W

total power dissipation

[4]

-

25

W

junction temperature

-

175

°C

ambient temperature

-55

175

°C

storage temperature

-65

175

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Power dissipation from junction to mounting base.

-75

225

125

25

aaa-014785

2

4

6

(W)

0

(1)

(2)

(3)

(3) FR4 PCB, standard footprint

Fig. 1. Power derating curves