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AP03N70H-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP03N70H-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page AP03N70H/J-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Speed RDS(ON) 3.6Ω ▼ Simple Drive Requirement ID 3.3A ▼ RoHS Compliant Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V A ID@TC=100℃ Drain Current, VGS @ 10V A IDM Pulsed Drain Current 1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy 2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.3 ℃ /W Rthj-a 62.5 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃ /W Data & specifications subject to change without notice Halogen-Free Product Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 201509105 2.1 3.3 600 Rating Storage Temperature Range Linear Derating Factor -55 to 150 0.44 54.3 13.2 Parameter 2.5 Parameter -55 to 150 31 1 +30 G D S G D S TO-252(H) G D S TO-251(J) AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP03N70J) are available for low-profile applications. . |
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