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FGA25N120AN Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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FGA25N120AN Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 6 page  Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 3mA 1200 -- -- V ∆B VCES/ ∆T J Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 3mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 25mA, VCE = VGE 3.5 5.5 7.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 25A, VGE = 15V -- 2.5 3.2 V IC = 25A, VGE = 15V, TC = 125°C -- 2.9 -- V IC = 40A, VGE = 15V -- 3.1 -- V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 2100 -- pF Coes Output Capacitance -- 180 -- pF Cres Reverse Transfer Capacitance -- 90 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -- 60 -- ns tr Rise Time -- 60 -- ns td(off) Turn-Off Delay Time -- 170 -- ns tf Fall Time -- 45 90 ns Eon Turn-On Switching Loss -- 4.8 7.2 mJ Eoff Turn-Off Switching Loss -- 1.0 1.5 mJ Ets Total Switching Loss -- 5.7 8.7 mJ td(on) Turn-On Delay Time VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C -- 60 -- ns tr Rise Time -- 60 -- ns td(off) Turn-Off Delay Time -- 180 -- ns tf Fall Time -- 70 -- ns Eon Turn-On Switching Loss -- 5.5 -- mJ Eoff Turn-Off Switching Loss -- 1.4 -- mJ Ets Total Switching Loss -- 6.9 -- mJ Qg Total Gate Charge VCE = 600 V, IC = 25A, VGE = 15V -- 200 300 nC Qge Gate-Emitter Charge -- 15 23 nC Qgc Gate-Collector Charge -- 105 160 nC Le Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH FGA25N120AN www.kersemi.com 2014-8-14 2 |
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