10-F112M3A025SH-M746-F09 datasheet(4/26 Pages) VINCOTECH

Part #	10-F112M3A025SH-M746-F09

Description	3 phase mixed voltage component topology

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Manufacturer	VINCOTECH [Vincotech]

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10-F112M3A025SH-M746F09

10-FY12M3A025SH-M746F08

datasheet

Parameter

Symbol

Unit

VGE [V] or

VGS [V]

Vr [V]

or

VCE [V] or

VDS [V]

IC [A] or

IF [A] or

ID [A]

Tj

Min

Typ

Max

Characteristic Values

Value

Conditions

Tj=25°C

5

5,8

6,5

Tj=125°C

Tj=25°C

1,1

1,53

1,9

Tj=125°C

1,70

Tj=25°C

0,0011

Tj=125°C

Tj=25°C

300

Tj=125°C

Tj=25°C

72

Tj=125°C

74

Tj=25°C

14

Tj=125°C

16

Tj=25°C

131

Tj=125°C

157

Tj=25°C

34

Tj=125°C

69

Tj=25°C

0,31

Tj=125°C

0,39

Tj=25°C

0,38

Tj=125°C

0,53

Thermal resistance chip to heatsink per chip

RthJH

3,09

Tj=25°C

2,18

2,65

Tj=125°C

2,30

Tj=25°C

60

Tj=125°C

Tj=25°C

21

Tj=125°C

24

Tj=25°C

29,9

Tj=125°C

34,7

Tj=25°C

0,7

Tj=125°C

1,5

di(rec)max

Tj=25°C

1972

/dt

Tj=125°C

2214

Tj=25°C

0,14

Tj=125°C

0,38

Thermal resistance chip to heatsink per chip

RthJH

Thermal grease

thickness≤50um

λ = 1 W/mK

3,65

K/W

3884

F

K

B-value

B(25/100)

K

3964

T=25°C

Vincotech NTC Reference

T=25°C

1200

B-value

B(25/50)

32

none

VCE=VGE

Rgon=16 Ω

Thermal grease

thickness≤50um

λ = 1 W/mK

Rgoff=16 Ω

f=1MHz

Reverse recovery energy

Erec

Reverse recovery time

Peak rate of fall of recovery current

trr

Reverse recovered charge

Diode forward voltage

Reverse leakage current

VF

Ir

20

±15

15

0

15

Qrr

R

IRRM

Power dissipation constant

Power dissipation

P

Thermistor

Deviation of R100

Rated resistance

∆R/R

R100=1486 Ω

-4,5

350

±15

µA

Ω

T=25°C

T=100°C

21511

15

8

mW/K

mW

%

3,5

+4,5

210

Tj=25°C

20

600

350

25

0

480

0,0012

20

Ω

mA

nA

V

ns

Tj=25°C

pF

nC

120

mWs

71

1100

Half Bridge FWD (D1,D4,D5,D8,D9,D12)

Gate charge

0

Rgon=16 Ω

Input capacitance

Output capacitance

Crss

Coss

Cies

tf

Turn-off energy loss per pulse

Fall time

tr

td(on)

Rgint

IGES

ICES

VCE(sat)

QGate

Eoff

td(off)

Eon

Turn-on energy loss per pulse

Turn-off delay time

Collector-emitter saturation voltage

Collector-emitter cut-off incl diode

Rise time

Integrated Gate resistor

Peak reverse recovery current

VGE(th)

Gate emitter threshold voltage

Reverse transfer capacitance

Turn-on delay time

Gate-emitter leakage current

Neutral P. IGBT (T2,T3,T6,T7,T10,T11)

K/W

mWs

µC

V

ns

A/µs

A

15

copyright Vincotech

4

2014.12.18. / Revision: 3

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