10-xx06NIA100SA-M135Fxx

Parameter

Symbol

Unit

or

Min

Typ

Max

Tj=25°C

5

5,8

6,5

Tj=150°C

Tj=25°C

1,05

1,50

1,85

Tj=150°C

1,73

Tj=25°C

60

Tj=150°C

Tj=25°C

1,4

Tj=150°C

Tj=25°C

160

Tj=150°C

189

Tj=25°C

26

Tj=150°C

31

Tj=25°C

270

Tj=150°C

296

Tj=25°C

100

Tj=150°C

123

Tj=25°C

1,887

Tj=150°C

2,405

Tj=25°C

2,903

Tj=150°C

3,808

Thermal resistance chip to heatsink per chip

Thermal grease

thickness

≤50um

λ = 0,81 W/mK

0,699

K/W

Tj=25°C

1,4

1,70

1,9

Tj=150°C

1,71

Tj=25°C

86

Tj=150°C

113

Tj=25°C

127

Tj=150°C

164

Tj=25°C

5,072

Tj=150°C

9,357

di(rec)max

Tj=25°C

3385

/dt

Tj=150°C

1871

Tj=25°C

1,154

Tj=150°C

2,238

Thermal resistance chip to heatsink per chip

Thermal grease

thickness

≤50um

λ = 0,81 W/mK

1,360

K/W

Note: All characteristic values are related to gates of paralell IGBTs connected together

ns

400

6280

pF

186

620

none

Ω

V

mWs

A

V

ns

µA

µA

A/µs

Rgon=8

Ω

0

Tj=25°C

Tj=25°C

Buck IGBT

Gate emitter threshold voltage

Integrated Gate resistor

Input capacitance

Turn-on energy loss per pulse

Fall time

Turn-off delay time

Turn-on delay time

Collector-emitter cut-off current incl. Diode

Gate-emitter leakage current

Characteristic Values

Value

Conditions

Collector-emitter saturation voltage

Rise time

Output capacitance

Turn-off energy loss per pulse

Reverse recovered energy

Reverse recovered charge

Reverse recovery time

Peak reverse recovery current

Reverse transfer capacitance

Diode forward voltage

Gate charge

Buck Diode

Peak rate of fall of recovery current

15

20

600

0

f=1MHz

Rgoff=8

Ω

VCE=VGE

Rgon=8

Ω

Erec

15

25

±15

350

100

0

350

480

±15

0,0016

100

100

V

nC

µC

mWs

100

100

3

Revision: 3

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